IXFX62N25 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFX62N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 417 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 62 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 240 nC
trⓘ - Rise Time: 250 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: PLUS247
IXFX62N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFX62N25 Datasheet (PDF)
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