All MOSFET. IXFX80N60P3 Datasheet

 

IXFX80N60P3 Datasheet and Replacement


   Type Designator: IXFX80N60P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: PLUS247
 

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IXFX80N60P3 Datasheet (PDF)

 7.1. Size:230K  ixys
 ixfk80n50p ixfx80n50p.pdf pdf_icon

IXFX80N60P3

IXFK 80N50P VDSS = 500 VPolarHVTM HiPerFETIXFX 80N50P ID25 = 80 APower MOSFET RDS(on) 65 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum Ratings TO-264 (IXFK)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSM Transient

Datasheet: IXFX64N60P3 , IXFX64N60Q3 , IXFX66N50Q2 , IXFX73N30Q , IXFX74N50P2 , IXFX78N50P3 , IXFX80N50P , IXFX80N50Q3 , AO4468 , IXFX88N20Q , IXFX94N50P2 , IXFX98N50P3 , IXFZ140N25T , IXFZ520N075T2 , IXKC13N80C , IXKC15N60C5 , IXKC19N60C5 .

History: IRFP242R | 2SK3488 | IAUS180N04S4N015 | SVG041R2NL5 | GSM2913W | GSM3346W | 2SK3483

Keywords - IXFX80N60P3 MOSFET datasheet

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