IXFX80N60P3 Datasheet. Specs and Replacement

Type Designator: IXFX80N60P3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: PLUS247

IXFX80N60P3 substitution

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IXFX80N60P3 datasheet

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 ixfk80n50p ixfx80n50p.pdf pdf_icon

IXFX80N60P3

IXFK 80N50P VDSS = 500 V PolarHVTM HiPerFET IXFX 80N50P ID25 = 80 A Power MOSFET RDS(on) 65 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSM Transient... See More ⇒

Detailed specifications: IXFX64N60P3, IXFX64N60Q3, IXFX66N50Q2, IXFX73N30Q, IXFX74N50P2, IXFX78N50P3, IXFX80N50P, IXFX80N50Q3, 60N06, IXFX88N20Q, IXFX94N50P2, IXFX98N50P3, IXFZ140N25T, IXFZ520N075T2, IXKC13N80C, IXKC15N60C5, IXKC19N60C5

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.