All MOSFET. IXFX94N50P2 Datasheet

 

IXFX94N50P2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFX94N50P2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 94 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 228 nC
   trⓘ - Rise Time: 250 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: PLUS247

 IXFX94N50P2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFX94N50P2 Datasheet (PDF)

 ..1. Size:135K  ixys
 ixfk94n50p2 ixfx94n50p2.pdf

IXFX94N50P2 IXFX94N50P2

Polar2TM HiPerFETTM VDSS = 500VIXFK94N50P2Power MOSFET ID25 = 94AIXFX94N50P2 RDS(on) 55m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXFK)Fast Intrinsic DiodeGSymbol Test Conditions Maximum RatingsDSVDSS TJ = 25C to 150C 500 VTabVDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continuous 30 VPLUS247 (IXFX)VGSM Tr

 9.1. Size:197K  ixys
 ixfk90n60x ixfx90n60x.pdf

IXFX94N50P2 IXFX94N50P2

Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFK90N60XPower MOSFET ID25 = 90AIXFX90N60X RDS(on) 38m N-Channel Enhancement ModeAvalanche RatedTO-264P (IXFK)Fast Intrinsic DiodeSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 600 VDTabVDGR TJ = 25C to 150C, RGS = 1M 600 VSVGSS

 9.2. Size:125K  ixys
 ixfx90n30 ixfk90n30.pdf

IXFX94N50P2 IXFX94N50P2

IXFX 90N30 VDSS = 300 VHiPerFETTMIXFK 90N30 ID25 = 90 APower MOSFETsRDS(on) = 33 mSingle MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TMVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 V(TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C (MOSFET chip capabi

 9.3. Size:52K  ixys
 ixfx90n20q ixfk90n20q.pdf

IXFX94N50P2 IXFX94N50P2

HiPerFETTM IXFX 90N20Q VDSS = 200 VIXFK 90N20Q ID25 = 90 APower MOSFETs RDS(on) = 22 mQ-CLASSSingle MOSFET Die trr s 200 N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dV/dt, Low trrPLUS 247TM (IXFX)Symbol Test Conditions Maximum Ratings (TAB)GDVDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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