IXKN45N80C Datasheet. Specs and Replacement
Type Designator: IXKN45N80C 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 380 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 44 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 500 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.074 Ohm
Package: SOT227B
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IXKN45N80C substitution
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IXKN45N80C datasheet
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Detailed specifications: IXKH20N60C5, IXKH24N60C5, IXKH30N60C5, IXKH35N60C5, IXKH47N60C, IXKH70N60C5, IXKK85N60C, IXKN40N60C, IRF3710, IXKN75N60C, IXKP10N60C5, IXKP10N60C5M, IXKP13N60C5, IXKP13N60C5M, IXKP20N60C5, IXKP20N60C5M, IXKP24N60C5
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