IXKN45N80C PDF Specs and Replacement
Type Designator: IXKN45N80C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 380 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 44 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 500 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.074 Ohm
Package: SOT227B
IXKN45N80C substitution
IXKN45N80C PDF Specs
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Detailed specifications: IXKH20N60C5 , IXKH24N60C5 , IXKH30N60C5 , IXKH35N60C5 , IXKH47N60C , IXKH70N60C5 , IXKK85N60C , IXKN40N60C , IRF3710 , IXKN75N60C , IXKP10N60C5 , IXKP10N60C5M , IXKP13N60C5 , IXKP13N60C5M , IXKP20N60C5 , IXKP20N60C5M , IXKP24N60C5 .
Keywords - IXKN45N80C MOSFET specs
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