IXKP13N60C5 PDF and Equivalents Search

 

IXKP13N60C5 PDF Specs and Replacement


   Type Designator: IXKP13N60C5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 300 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO220
 

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IXKP13N60C5 PDF Specs

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IXKP13N60C5

IXKP 13N60C5M ID25 = 6.5 A CoolMOS 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.3 Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D TO-220 FP Ultra low gate charge G D G S Preliminary data S Features MOSFET fast CoolMOS 1) power MOSFET Symbol Conditions Maximum Ratings 4th generation VDSS TVJ = 25 C 600 V - High blocking capabi... See More ⇒

Detailed specifications: IXKH47N60C , IXKH70N60C5 , IXKK85N60C , IXKN40N60C , IXKN45N80C , IXKN75N60C , IXKP10N60C5 , IXKP10N60C5M , 2N7000 , IXKP13N60C5M , IXKP20N60C5 , IXKP20N60C5M , IXKP24N60C5 , IXKP24N60C5M , IXKR25N80C , IXKR40N60C , IXKR47N60C5 .

Keywords - IXKP13N60C5 MOSFET specs

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