All MOSFET. IXTA08N100P Datasheet

 

IXTA08N100P Datasheet and Replacement


   Type Designator: IXTA08N100P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 750 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 20 Ohm
   Package: TO263
 

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IXTA08N100P Datasheet (PDF)

 4.1. Size:177K  ixys
 ixty08n100d2-ixta08n100d2-ixtp08n100d2.pdf pdf_icon

IXTA08N100P

Preliminary Technical InformationDepletion Mode VDSX = 1000VIXTY08N100D2MOSFET ID(on) > 800mAIXTA08N100D2 RDS(on) 21 IXTP08N100D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 1000 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C60 WD (Tab)TJ -

 4.2. Size:270K  ixys
 ixty08n100d2 ixta08n100d2 ixtp08n100d2.pdf pdf_icon

IXTA08N100P

Depletion Mode VDSX = 1000VIXTY08N100D2MOSFET ID(on) > 800mAIXTA08N100D2 RDS(on) 21 IXTP08N100D2N-ChannelDTO-252 (IXTY)GSGD (Tab)STO-263 AA (IXTA)Symbol Test Conditions Maximum RatingsGVDSX TJ = 25C to 150C 1000 VSD (Tab)VGSX Continuous 20 VVGSM Transient 30 VTO-220AB (IXTP)PD TC = 25C60 WTJ

 4.3. Size:186K  ixys
 ixta08n100d2hv.pdf pdf_icon

IXTA08N100P

Advance Technical InformationHigh Voltage VDSX = 1000VIXTA08N100D2HVDepletion Mode ID(on) > 800mAMOSFET RDS(on) 21 N-ChannelTO-263HVGSSymbol Test Conditions Maximum Ratings D (Tab)VDSX TJ = 25C to 150C 1000 VVDGX TJ = 25C to 150C, RGS = 1M 1000 VG = Gate D = DrainVGSX Continuous 20 VS = Source Tab = Drain

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Datasheet: IXKP24N60C5M , IXKR25N80C , IXKR40N60C , IXKR47N60C5 , IXTA05N100 , IXTA05N100P , IXTA06N120P , IXTA08N100D2 , IRLB4132 , IXTA08N120P , IXTA08N50D2 , IXTA100N04T2 , IXTA102N15T , IXTA10N60P , IXTA10P15T , IXTA10P50P , IXTA110N055P .

Keywords - IXTA08N100P MOSFET datasheet

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