3SK123 Datasheet and Replacement

   Type Designator: 3SK123
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 18 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 0.025 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
   Package: TO131
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