All MOSFET. IXTA120N04T2 Datasheet

 

IXTA120N04T2 Datasheet and Replacement


   Type Designator: IXTA120N04T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 35 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm
   Package: TO263
 

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IXTA120N04T2 Datasheet (PDF)

 8.1. Size:200K  ixys
ixta12n65x2 ixth12n65x2 ixtp12n65x2.pdf pdf_icon

IXTA120N04T2

Advance Technical InformationX2-Class VDSS = 650VIXTA12N65X2Power MOSFET ID25 = 12AIXTP12N65X2 RDS(on) 300m IXTH12N65X2N-Channel Enhancement ModeTO-263 AA (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30

 8.2. Size:344K  ixys
ixta12n70x2 ixtp12n70x2 ixth12n70x2.pdf pdf_icon

IXTA120N04T2

Preliminary Technical InformationX2-Class VDSS = 700VIXTA12N70X2Power MOSFET ID25 = 12AIXTP12N70X2 RDS(on) 300m IXTH12N70X2N-Channel Enhancement ModeTO-263 (IXTA)GSD (Tab)Symbol Test Conditions Maximum Ratings TO-220 (IXTP)VDSS TJ = 25C to 150C 700 VVDGR TJ = 25C to 150C, RGS = 1M 700 VVGSS Continuous 30 V

 8.3. Size:257K  inchange semiconductor
ixta12n70x2.pdf pdf_icon

IXTA120N04T2

Isc N-Channel MOSFET Transistor IXTA12N70X2FEATURESWith TO-263(D2PAK) packagingLow gate chargeHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

Datasheet: IXTA102N15T , IXTA10N60P , IXTA10P15T , IXTA10P50P , IXTA110N055P , IXTA110N055T , IXTA110N055T2 , IXTA110N055T7 , IRF530 , IXTA120N075T2 , IXTA120P065T , IXTA12N50P , IXTA130N065T2 , IXTA130N10T , IXTA130N10T7 , IXTA140N055T2 , IXTA140P05T .

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