IXTA120P065T Datasheet. Specs and Replacement

Type Designator: IXTA120P065T

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 298 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO263

IXTA120P065T substitution

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IXTA120P065T datasheet

 8.1. Size:200K  ixys
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IXTA120P065T

Advance Technical Information X2-Class VDSS = 650V IXTA12N65X2 Power MOSFET ID25 = 12A IXTP12N65X2 RDS(on) 300m IXTH12N65X2 N-Channel Enhancement Mode TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 ... See More ⇒

 8.2. Size:344K  ixys
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IXTA120P065T

Preliminary Technical Information X2-Class VDSS = 700V IXTA12N70X2 Power MOSFET ID25 = 12A IXTP12N70X2 RDS(on) 300m IXTH12N70X2 N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 700 V VDGR TJ = 25 C to 150 C, RGS = 1M 700 V VGSS Continuous 30 V ... See More ⇒

 8.3. Size:257K  inchange semiconductor
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IXTA120P065T

Isc N-Channel MOSFET Transistor IXTA12N70X2 FEATURES With TO-263(D2PAK) packaging Low gate charge High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta... See More ⇒

Detailed specifications: IXTA10P15T, IXTA10P50P, IXTA110N055P, IXTA110N055T, IXTA110N055T2, IXTA110N055T7, IXTA120N04T2, IXTA120N075T2, AON6380, IXTA12N50P, IXTA130N065T2, IXTA130N10T, IXTA130N10T7, IXTA140N055T2, IXTA140P05T, IXTA14N60P, IXTA152N085T

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