IXTA120P065T MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTA120P065T
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 298 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 185 nC
trⓘ - Rise Time: 53 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO263
IXTA120P065T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTA120P065T Datasheet (PDF)
ixta12n65x2 ixth12n65x2 ixtp12n65x2.pdf
Advance Technical InformationX2-Class VDSS = 650VIXTA12N65X2Power MOSFET ID25 = 12AIXTP12N65X2 RDS(on) 300m IXTH12N65X2N-Channel Enhancement ModeTO-263 AA (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30
ixta12n70x2 ixtp12n70x2 ixth12n70x2.pdf
Preliminary Technical InformationX2-Class VDSS = 700VIXTA12N70X2Power MOSFET ID25 = 12AIXTP12N70X2 RDS(on) 300m IXTH12N70X2N-Channel Enhancement ModeTO-263 (IXTA)GSD (Tab)Symbol Test Conditions Maximum Ratings TO-220 (IXTP)VDSS TJ = 25C to 150C 700 VVDGR TJ = 25C to 150C, RGS = 1M 700 VVGSS Continuous 30 V
ixta12n70x2.pdf
Isc N-Channel MOSFET Transistor IXTA12N70X2FEATURESWith TO-263(D2PAK) packagingLow gate chargeHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
Datasheet: IXTA10P15T , IXTA10P50P , IXTA110N055P , IXTA110N055T , IXTA110N055T2 , IXTA110N055T7 , IXTA120N04T2 , IXTA120N075T2 , IRF2807 , IXTA12N50P , IXTA130N065T2 , IXTA130N10T , IXTA130N10T7 , IXTA140N055T2 , IXTA140P05T , IXTA14N60P , IXTA152N085T .
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