IXTA1N120P Datasheet and Replacement. Cross Reference Search

IXTA1N120P Datasheet (PDF)

7.1. Size:238K ixys
ixta1n170dhv ixth1n170dhv.pdf pdf_icon

Advance Technical InformationDepletion Mode VDSX = 1700VIXTA1N170DHVMOSFET ID(on) > 1AIXTH1N170DHV RDS(on) 16 N-ChannelTO-263HV (IXTA)GS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSX TJ = 25C to 150C 1700 VVDGX TJ = 25C to 150C, RGS = 1M 1700 VVGSX Continuous 20 VVGSM Transient 30 V

7.2. Size:95K ixys
ixta1n100p ixtp1n100p.pdf pdf_icon

Advance Technical InformationIXTA 1N100P VDSS = 1000 VPolarHVTMIXTP 1N100P ID25 = 1.2 APower MOSFETRDS(on) = 13 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VGVGS Continuous 20 VS(TAB)VGSM Transient 30 VID25 TC = 25C

7.3. Size:535K ixys
ixta1n100 ixtp1n100.pdf pdf_icon

VDSS = 1000 VIXTA 1N100High Voltage MOSFETIXTP 1N100 ID25 = 1.5 A RDS(on) = 11 N-Channel Enhancement ModeAvalanche Energy RatedSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 30 VD (TAB)GVGSM Transient 40 VDSID25 TC = 25C 1.5 AIDM TC =

7.4. Size:202K inchange semiconductor
ixta1n100p.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IXTA1N100PFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .