IXTA200N055T2 Datasheet. Specs and Replacement

Type Designator: IXTA200N055T2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 360 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO263

IXTA200N055T2 substitution

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IXTA200N055T2 datasheet

 5.1. Size:198K  ixys
 ixta200n075t7.pdf pdf_icon

IXTA200N055T2

Preliminary Technical Information VDSS = 75 V IXTA200N075T7 TrenchMVTM ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V 1 ID25 TC = 25 ... See More ⇒

 5.2. Size:215K  ixys
 ixta200n085t ixtp200n085t.pdf pdf_icon

IXTA200N055T2

Preliminary Technical Information IXTA 200N085T VDSS = 85 V TrenchMVTM IXTP 200N085T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V S (TAB) ID25... See More ⇒

 5.3. Size:163K  ixys
 ixta200n085t7.pdf pdf_icon

IXTA200N055T2

Preliminary Technical Information VDSS = 85 V IXTA200N085T7 TrenchMVTM ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V 1 ID25 TC = 25 C 200 A 7 ... See More ⇒

 5.4. Size:215K  ixys
 ixta200n075t ixtp200n075t.pdf pdf_icon

IXTA200N055T2

Preliminary Technical Information IXTA200N075T VDSS = 75 V TrenchMVTM IXTP200N075T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S (TAB) ID25... See More ⇒

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Detailed specifications: IXTA1N100P, IXTA1N120P, IXTA1N80, IXTA1N80P, IXTA1R4N100P, IXTA1R4N120P, IXTA1R6N100D2, IXTA1R6N50D2, IRFZ48N, IXTA200N055T2-7, IXTA200N075T, IXTA200N075T7, IXTA200N085T, IXTA200N085T7, IXTA220N04T2, IXTA220N04T2-7, IXTA220N055T

Keywords - IXTA200N055T2 MOSFET specs

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