All MOSFET. IXTA24P085T Datasheet

 

IXTA24P085T Datasheet and Replacement


   Type Designator: IXTA24P085T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO263
 

 IXTA24P085T substitution

   - MOSFET ⓘ Cross-Reference Search

 

IXTA24P085T Datasheet (PDF)

 8.1. Size:173K  ixys
ixta240n055t ixtp240n055t.pdf pdf_icon

IXTA24P085T

Preliminary Technical InformationIXTA240N055T VDSS = 55 VTrenchMVTMIXTP240N055T ID25 = 240 APower MOSFET RDS(on) 3.6 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 TC = 25C 2

 8.2. Size:162K  ixys
ixta240n055t7.pdf pdf_icon

IXTA24P085T

Preliminary Technical InformationVDSS = 55 VIXTA240N055T7TrenchMVTMID25 = 240 APower MOSFET RDS(on) 3.6 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient 20 V1ID25 TC = 25C 240 A 7

 9.1. Size:198K  ixys
ixta200n075t7.pdf pdf_icon

IXTA24P085T

Preliminary Technical InformationVDSS = 75 VIXTA200N075T7TrenchMVTMID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25 C to 175 C75 VVDGR TJ = 25 C to 175 C; RGS = 1 M 75 VVGSM Transient 20 V1ID25 TC = 25

 9.2. Size:214K  ixys
ixta220n055t ixtp220n055t.pdf pdf_icon

IXTA24P085T

Preliminary Technical InformationIXTA220N055T VDSS = 55 VTrenchMVTMIXTP220N055T ID25 = 220 APower MOSFET RDS(on) 4.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 T

Datasheet: IXTA220N055T , IXTA220N055T7 , IXTA220N075T , IXTA220N075T7 , IXTA230N075T2 , IXTA230N075T2-7 , IXTA240N055T , IXTA240N055T7 , BS170 , IXTA260N055T2 , IXTA260N055T2-7 , IXTA26P10T , IXTA26P20P , IXTA28P065T , IXTA2N100 , IXTA2N100P , IXTA2N80P .

History: TK35E08N1

Keywords - IXTA24P085T MOSFET datasheet

 IXTA24P085T cross reference
 IXTA24P085T equivalent finder
 IXTA24P085T lookup
 IXTA24P085T substitution
 IXTA24P085T replacement

 

 
Back to Top

 


 
.