All MOSFET. IXTA28P065T Datasheet

 

IXTA28P065T MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTA28P065T

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 65 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 28 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 46 nC

Rise Time (tr): 31 nS

Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm

Package: TO263

IXTA28P065T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTA28P065T Datasheet (PDF)

5.1. ixta220n075t7.pdf Size:163K _ixys

IXTA28P065T
IXTA28P065T

Preliminary Technical Information VDSS = 75 V IXTA220N075T7 TrenchMVTM ID25 = 220 A Power MOSFET ? ? RDS(on) ? 4.5 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25C to 175C75 V VDGR TJ = 25C to 175C; RGS = 1 M? 75 V VGSM Transient 20 V 1 ID25 TC = 25C 220 A 7 ILRMS Package Current Li

5.2. ixta2n80 ixtp2n80.pdf Size:113K _ixys

IXTA28P065T
IXTA28P065T

VDSS = 800 V High Voltage MOSFET IXTA 2N80 ID25 = 2 A IXTP 2N80 ? ? RDS(on) = 6.2 ? ? ? N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25C2 A IDM TC = 25C, pulse

 5.3. ixta2n100 ixtp2n100.pdf Size:76K _ixys

IXTA28P065T
IXTA28P065T

High Voltage VDSS = 1000 V IXTA 2N100 MOSFET ID25 = 2 A IXTP 2N100 ? RDS(on) = 7 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25C2 A IDM TC = 25C, pulse width limited by TJM 8 A TO-263 AA (IXT

5.4. ixta20n65x ixth20n65x ixtp20n65x.pdf Size:231K _ixys

IXTA28P065T
IXTA28P065T

Preliminary Technical Information X-Class VDSS = 650V IXTA20N65X Power MOSFET ID25 = 20A IXTP20N65X   RDS(on)    210m     IXTH20N65X N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VG

 5.5. ixta240n055t ixtp240n055t.pdf Size:173K _ixys

IXTA28P065T
IXTA28P065T

Preliminary Technical Information IXTA240N055T VDSS = 55 V TrenchMVTM IXTP240N055T ID25 = 240 A Power MOSFET ? ? RDS(on) ? 3.6 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 175C55 V VDGR TJ = 25C to 175C; RGS = 1 M? 55 V G VGSM Transient 20 V S (TAB) ID25 TC = 25C 240 A ILRMS Lead Current

5.6. ixta220n055t ixtp220n055t.pdf Size:214K _ixys

IXTA28P065T
IXTA28P065T

Preliminary Technical Information IXTA220N055T VDSS = 55 V TrenchMVTM IXTP220N055T ID25 = 220 A Power MOSFET ? ? RDS(on) ? 4.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 220 A ILRMS Lead Cu

5.7. ixta200n075t ixtp200n075t.pdf Size:215K _ixys

IXTA28P065T
IXTA28P065T

Preliminary Technical Information IXTA200N075T VDSS = 75 V TrenchMVTM IXTP200N075T ID25 = 200 A Power MOSFET ? ? RDS(on) ? 5.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 75 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 200 A ILRMS Lead

5.8. ixta270n04t4 ixth270n04t4 ixtp270n04t4.pdf Size:163K _ixys

IXTA28P065T
IXTA28P065T

Advance Technical Information VDSS = 40V TrenchT4TM IXTA270N04T4 ID25 = 270A Power MOSFET IXTP270N04T4   RDS(on)    2.4m     IXTH270N04T4 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C40 V G D D (Tab) S VDGR TJ = 25C to 175C, RG

5.9. ixta220n075t ixtp220n075t.pdf Size:175K _ixys

IXTA28P065T
IXTA28P065T

Preliminary Technical Information IXTA220N075T VDSS = 75 V TrenchMVTM IXTP220N075T ID25 = 220 A Power MOSFET ? ? RDS(on) ? 4.5 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 175C75 V VDGR TJ = 25C to 175C; RGS = 1 M? 75 V G VGSM Transient 20 V S (TAB) ID25 TC = 25C 220 A ILRMS Lead Current

5.10. ixta200n085t ixtp200n085t.pdf Size:215K _ixys

IXTA28P065T
IXTA28P065T

Preliminary Technical Information IXTA 200N085T VDSS = 85 V TrenchMVTM IXTP 200N085T ID25 = 200 A Power MOSFET ? ? RDS(on) ? 5.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 85 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 200 A ILRMS Lead

5.11. ixta260n055t2 ixtp260n055t2.pdf Size:248K _ixys

IXTA28P065T
IXTA28P065T

TrenchT2TM IXTA260N055T2 VDSS = 55V IXTP260N055T2 ID25 = 260A Power MOSFET ? ? RDS(on) ? ? ? 3.3m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 175C 55 V S (TAB) VDGR TJ = 25C to 175C, RGS = 1M? 55 V VGSM Transient 20 V TO-220 (IXTP) ID25 TC = 25C 260 A ILRMS Lead Current Limit, RMS

5.12. ixta240n055t7.pdf Size:162K _ixys

IXTA28P065T
IXTA28P065T

Preliminary Technical Information VDSS = 55 V IXTA240N055T7 TrenchMVTM ID25 = 240 A Power MOSFET ? ? RDS(on) ? 3.6 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25C to 175C55 V VDGR TJ = 25C to 175C; RGS = 1 M? 55 V VGSM Transient 20 V 1 ID25 TC = 25C 240 A 7 ILRMS Package Current Li

5.13. ixta220n055t7.pdf Size:197K _ixys

IXTA28P065T
IXTA28P065T

Preliminary Technical Information VDSS = 55 V IXTA220N055T7 TrenchMVTM ID25 = 220 A Power MOSFET ? ? RDS(on) ? 4.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V VGSM Transient 20 V 1 ID25 TC = 25 C 220 A 7 ILRMS Package Curre

5.14. ixta200n085t7.pdf Size:163K _ixys

IXTA28P065T
IXTA28P065T

Preliminary Technical Information VDSS = 85 V IXTA200N085T7 TrenchMVTM ID25 = 200 A Power MOSFET ? ? RDS(on) ? 5.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25C to 175C85 V VDGR TJ = 25C to 175C; RGS = 1 M? 85 V VGSM Transient 20 V 1 ID25 TC = 25C 200 A 7 ILRMS Lead Limited, RMS

5.15. ixta200n075t7.pdf Size:198K _ixys

IXTA28P065T
IXTA28P065T

Preliminary Technical Information VDSS = 75 V IXTA200N075T7 TrenchMVTM ID25 = 200 A Power MOSFET ? ? RDS(on) ? 5.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 75 V VGSM Transient 20 V 1 ID25 TC = 25 C 200 A 7 ILRMS Package Curre

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