IXTA2N100P Datasheet. Specs and Replacement

Type Designator: IXTA2N100P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 86 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 800 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm

Package: TO263

IXTA2N100P substitution

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IXTA2N100P datasheet

 5.1. Size:76K  ixys
ixta2n100 ixtp2n100.pdf pdf_icon

IXTA2N100P

High Voltage VDSS = 1000 V IXTA 2N100 MOSFET ID25 = 2 A IXTP 2N100 RDS(on) = 7 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C2 A IDM TC = 25 C, pulse width limited by ... See More ⇒

 8.1. Size:113K  ixys
ixta2n80 ixtp2n80.pdf pdf_icon

IXTA2N100P

VDSS = 800 V High Voltage MOSFET IXTA 2N80 ID25 = 2 A IXTP 2N80 RDS(on) = 6.2 N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C2 A... See More ⇒

 9.1. Size:198K  ixys
ixta200n075t7.pdf pdf_icon

IXTA2N100P

Preliminary Technical Information VDSS = 75 V IXTA200N075T7 TrenchMVTM ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V 1 ID25 TC = 25 ... See More ⇒

 9.2. Size:214K  ixys
ixta220n055t ixtp220n055t.pdf pdf_icon

IXTA2N100P

Preliminary Technical Information IXTA220N055T VDSS = 55 V TrenchMVTM IXTP220N055T ID25 = 220 A Power MOSFET RDS(on) 4.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 T... See More ⇒

Detailed specifications: IXTA240N055T7, IXTA24P085T, IXTA260N055T2, IXTA260N055T2-7, IXTA26P10T, IXTA26P20P, IXTA28P065T, IXTA2N100, IRF540, IXTA2N80P, IXTA2R4N120P, IXTA300N04T2, IXTA300N04T2-7, IXTA32N20T, IXTA32P05T, IXTA32P20T, IXTA36N30P

Keywords - IXTA2N100P MOSFET specs

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