IXTA36N30P Datasheet. Specs and Replacement

Type Designator: IXTA36N30P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO263

IXTA36N30P substitution

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IXTA36N30P datasheet

 ..1. Size:252K  ixys
 ixta36n30p ixtp36n30p ixtq36n30p.pdf pdf_icon

IXTA36N30P

IXTA 36N30P VDSS = 300 V PolarHTTM IXTP 36N30P ID25 = 36 A Power MOSFET IXTQ 36N30P RDS(on) 110 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V S D(TAB) VGS Continuous 30 V VGSM Transient 40 V TO-220 ... See More ⇒

 9.1. Size:237K  ixys
 ixta3n50p ixtp3n50p ixty3n50p.pdf pdf_icon

IXTA36N30P

IXTA 3N50P VDSS = 500 V PolarHVTM IXTP 3N50P ID25 = 3.6 A Power MOSFET IXTY 3N50P RDS(on) 2.0 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS 30 V VGSM 40 V (TAB) G D S ID25 TC = 25 C 3.6 A IDM ... See More ⇒

 9.2. Size:168K  ixys
 ixta3n50d2-ixtp3n50d2.pdf pdf_icon

IXTA36N30P

Depletion Mode VDSX = 500V IXTA3N50D2 MOSFET ID(on) > 3A IXTP3N50D2 RDS(on) 1.5 N-Channel TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings S VDSX TJ = 25 C to 150 C 500 V D (Tab) VGSX Continuous 20 V VGSM Transient 30 V TO-220AB (IXTP) PD TC = 25 C 125 W TJ - 55 ... +150 C TJM 150 C Tstg - 55 ... +150 C G D D (Tab)... See More ⇒

 9.3. Size:562K  ixys
 ixta3n120 ixtp3n120.pdf pdf_icon

IXTA36N30P

VDSS ID25 RDS(on) High Voltage IXTA 3N120 Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C3 A IDM TC = ... See More ⇒

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Detailed specifications: IXTA2N100P, IXTA2N80P, IXTA2R4N120P, IXTA300N04T2, IXTA300N04T2-7, IXTA32N20T, IXTA32P05T, IXTA32P20T, IRF640N, IXTA36P15P, IXTA3N100D2, IXTA3N100P, IXTA3N110, IXTA3N120, IXTA3N50D2, IXTA3N50P, IXTA3N60P

Keywords - IXTA36N30P MOSFET specs

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