IXTA460P2 Datasheet. Specs and Replacement

Type Designator: IXTA460P2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 480 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: TO263

IXTA460P2 substitution

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IXTA460P2 datasheet

 ..1. Size:156K  ixys
 ixta460p2 ixtp460p2 ixtq460p2 ixth460p2.pdf pdf_icon

IXTA460P2

PolarP2TM VDSS = 500V IXTA460P2 ID25 = 24A Power MOSFET IXTP460P2 RDS(on) 270m IXTQ460P2 N-Channel Enhancement Mode trr(typ) = 400ns Avalanche Rated IXTH460P2 Fast Intrinsic Diode TO-220AB (IXTP) TO-263 AA (IXTA) TO-3P (IXTQ) G G S D G D S D (Tab) D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V... See More ⇒

 0.1. Size:154K  ixys
 ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf pdf_icon

IXTA460P2

PolarP2TM VDSS = 500V IXTA460P2 ID25 = 24A Power MOSFET IXTP460P2 RDS(on) 270m IXTQ460P2 N-Channel Enhancement Mode trr(typ) = 400ns Avalanche Rated IXTH460P2 Fast Intrinsic Diode TO-220AB (IXTP) TO-263 AA (IXTA) TO-3P (IXTQ) G G S D G D S D (Tab) D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V... See More ⇒

 9.1. Size:196K  ixys
 ixta4n150hv.pdf pdf_icon

IXTA460P2

Preliminary Technical Information High Voltage VDSS = 1500V IXTA4N150HV ID25 = 4A Power MOSFETs IXTT4N150HV RDS(on) 6 N-Channel Enhancement Mode Fast Intrinsic Diode TO-263 Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 1500 V S VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V D (Tab) VGSS Continuous 30 V VGSM Transient ... See More ⇒

 9.2. Size:238K  ixys
 ixta4n65x2 ixtp4n65x2 ixty4n65x2.pdf pdf_icon

IXTA460P2

Preliminary Technical Information X2-Class VDSS = 650V IXTY4N65X2 Power MOSFET ID25 = 4A IXTA4N65X2 RDS(on) 850m IXTP4N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G ... See More ⇒

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Detailed specifications: IXTA3N110, IXTA3N120, IXTA3N50D2, IXTA3N50P, IXTA3N60P, IXTA42N15T, IXTA42N25P, IXTA44P15T, IRFP250N, IXTA48N20T, IXTA48P05T, IXTA4N60P, IXTA4N80P, IXTA50N20P, IXTA50N25T, IXTA50N28T, IXTA52P10P

Keywords - IXTA460P2 MOSFET specs

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