IXTA50N25T Datasheet and Replacement
Type Designator: IXTA50N25T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 166 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO263
IXTA50N25T substitution
IXTA50N25T Datasheet (PDF)
ixta50n25t ixtq50n25t ixtp50n25t ixth50n25t.pdf
IXTA50N25T IXTQ50N25TTrench Gate VDSS = 250VIXTP50N25T IXTH50N25TID25 = 50APower MOSFET RDS(on) 60m N-Channel Enhancement ModeTO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ)G GDSSGD (Tab)DD (Tab) D (Tab)STO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C, RGS = 1M
ixta5n60p ixtp5n60p.pdf
VDSS = 600 VIXTA 5N60PPolarHVTMID25 = 5 AIXTP 5N60PPower MOSFET RDS(on) 1.7 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 175C 600 VVDGR TJ = 25C to 175C; RGS = 1 M 600 VVGSS Continuous 30 VGVGSM Transient 40 VS(TAB)ID25 TC = 25C5 ATO-220 (I
ixta52p10p ixtp52p10p ixtq52p10p ixth52p10p.pdf
PolarPTM VDSS = - 100VIXTA52P10PID25 = - 52APower MOSFETsIXTP52P10P RDS(on) 50m IXTQ52P10PP-Channel Enhancement ModeAvalanche RatedIXTH52P10PTO-3P (IXTQ)TO-263 AA (IXTA) TO-220AB (IXTP)DGGGSDG SSD (Tab)D D (Tab)S TabSymbol Test Conditions Maximum Ratings TO-247 (IXTH)VDSS TJ = 25C to 150C -100 VVDGR TJ = 2
Datasheet: IXTA42N25P , IXTA44P15T , IXTA460P2 , IXTA48N20T , IXTA48P05T , IXTA4N60P , IXTA4N80P , IXTA50N20P , 2N7002 , IXTA50N28T , IXTA52P10P , IXTA56N15T , IXTA5N50P , IXTA5N60P , IXTA60N10T , IXTA60N20T , IXTA62N15P .
Keywords - IXTA50N25T MOSFET datasheet
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