All MOSFET. IXTA52P10P Datasheet

 

IXTA52P10P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTA52P10P

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 52 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 60 nC

Rise Time (tr): 120 nS

Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm

Package: TO263

IXTA52P10P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTA52P10P Datasheet (PDF)

5.1. ixta50n25t ixtq50n25t ixtp50n25t ixth50n25t.pdf Size:230K _ixys

IXTA52P10P
IXTA52P10P

IXTA50N25T IXTQ50N25T Trench Gate VDSS = 250V IXTP50N25T IXTH50N25T ID25 = 50A Power MOSFET ? ? RDS(on) ? 60m? ? ? ? ? ? ? N-Channel Enhancement Mode TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G D S S G D (Tab) D D (Tab) D (Tab) S TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 250 V VDGR TJ = 25C to 150C, RGS = 1M? 250 V VGSM Transient

5.2. ixta5n60p ixtp5n60p.pdf Size:120K _ixys

IXTA52P10P
IXTA52P10P

VDSS = 600 V IXTA 5N60P PolarHVTM ID25 = 5 A IXTP 5N60P Power MOSFET ? ? RDS(on) ? 1.7 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 175C 600 V VDGR TJ = 25C to 175C; RGS = 1 M? 600 V VGSS Continuous 30 V G VGSM Transient 40 V S (TAB) ID25 TC = 25C5 A TO-220 (IXTP) IDM TC = 25C, pulse

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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