IXTA52P10P Specs and Replacement
Type Designator: IXTA52P10P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 52 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 120 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO263
IXTA52P10P substitution
IXTA52P10P datasheet
ixta52p10p ixtp52p10p ixtq52p10p ixth52p10p.pdf
PolarPTM VDSS = - 100V IXTA52P10P ID25 = - 52A Power MOSFETs IXTP52P10P RDS(on) 50m IXTQ52P10P P-Channel Enhancement Mode Avalanche Rated IXTH52P10P TO-3P (IXTQ) TO-263 AA (IXTA) TO-220AB (IXTP) D G G G S D G S S D (Tab) D D (Tab) S Tab Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 2... See More ⇒
ixta5n60p ixtp5n60p.pdf
VDSS = 600 V IXTA 5N60P PolarHVTM ID25 = 5 A IXTP 5N60P Power MOSFET RDS(on) 1.7 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C 600 V VDGR TJ = 25 C to 175 C; RGS = 1 M 600 V VGSS Continuous 30 V G VGSM Transient 40 V S (TAB) ID25 TC = 25 C5 A TO-220 (I... See More ⇒
ixta50n25t ixtq50n25t ixtp50n25t ixth50n25t.pdf
IXTA50N25T IXTQ50N25T Trench Gate VDSS = 250V IXTP50N25T IXTH50N25T ID25 = 50A Power MOSFET RDS(on) 60m N-Channel Enhancement Mode TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G D S S G D (Tab) D D (Tab) D (Tab) S TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒
Detailed specifications: IXTA460P2 , IXTA48N20T , IXTA48P05T , IXTA4N60P , IXTA4N80P , IXTA50N20P , IXTA50N25T , IXTA50N28T , IRF4905 , IXTA56N15T , IXTA5N50P , IXTA5N60P , IXTA60N10T , IXTA60N20T , IXTA62N15P , IXTA6N100D2 , IXTA6N50D2 .
History: 7N60G-TQ2-T
Keywords - IXTA52P10P MOSFET specs
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