All MOSFET. IXTA86N20T Datasheet

 

IXTA86N20T MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTA86N20T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 480 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 86 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 140 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: TO263

 IXTA86N20T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTA86N20T Datasheet (PDF)

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