All MOSFET. IXTA98N075T Datasheet

 

IXTA98N075T Datasheet and Replacement


   Type Designator: IXTA98N075T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 98 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 100 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO263
 

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IXTA98N075T Datasheet (PDF)

 9.1. Size:215K  ixys
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IXTA98N075T

Preliminary Technical InformationIXTA90N055T VDSS = 55 VTrenchMVTMIXTP90N055T ID25 = 90 APower MOSFET RDS(on) 8.8 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 TC =

Datasheet: IXTA88N085T , IXTA88N085T7 , IXTA8N50P , IXTA90N055T , IXTA90N055T2 , IXTA90N075T2 , IXTA90N15T , IXTA96P085T , STP80NF70 , IXTA98N075T7 , IXTB30N100L , IXTB62N50L , IXTC110N055T , IXTC110N25T , IXTC13N50 , IXTC160N10T , IXTC180N085T .

History: CM8N50 | IPB120N08S4-03 | SQM90142E | CS65N20-30 | C3M0065100K | DMG8880LSS | IXFV110N10P

Keywords - IXTA98N075T MOSFET datasheet

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