IXTC110N25T MOSFET PDF: N-Ch, 250V, 50A. Datasheet. Full specification with pinout and replacement list

IXTC110N25T Specs and Replacement

   Type Designator: IXTC110N25T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 170 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: ISOPLUS220

IXTC110N25T substitution

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IXTC110N25T datasheet

..1. Size:186K ixys
ixtc110n25t.pdf pdf_icon

Trench Gate VDSS = 250V IXTC110N25T Power MOSFET ID25 = 50A RDS(on) 27m (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated ISOPLUS220 (IXTC) Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C, RGS = 1M 250 V VGSS Continuous 20 V G VGSM Transient 30 V D ... See More ⇒

9.1. Size:187K ixys
ixtc160n10t.pdf pdf_icon

Preliminary Technical Information IXTC160N10T VDSS = 100 V TrenchMVTM ID25 = 83 A Power MOSFET RDS(on) 7.5 m (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220 (IXTC) E153432 VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient ... See More ⇒

Detailed specifications: IXTA90N075T2 , IXTA90N15T , IXTA96P085T , IXTA98N075T , IXTA98N075T7 , IXTB30N100L , IXTB62N50L , IXTC110N055T , 18N50 , IXTC13N50 , IXTC160N10T , IXTC180N085T , IXTC180N10T , IXTC200N075T , IXTC200N085T , IXTC200N10T , IXTC220N055T .