All MOSFET. IXTC110N25T Datasheet

 

IXTC110N25T MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTC110N25T

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 180 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 157 nC

Rise Time (tr): 170 nS

Maximum Drain-Source On-State Resistance (Rds): 0.027 Ohm

Package: ISOPLUS220

IXTC110N25T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTC110N25T Datasheet (PDF)

0.1. ixtc110n25t.pdf Size:186K _ixys

IXTC110N25T
IXTC110N25T

Trench Gate VDSS = 250V IXTC110N25T Power MOSFET ID25 = 50A ≤ Ω RDS(on) ≤ Ω ≤ 27mΩ ≤ Ω ≤ Ω (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated ISOPLUS220 (IXTC) Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 250 V VGSS Continuous ± 20 V G VGSM Transient ± 30 V D

9.1. ixtc160n10t.pdf Size:187K _ixys

IXTC110N25T
IXTC110N25T

Preliminary Technical Information IXTC160N10T VDSS = 100 V TrenchMVTM ID25 = 83 A Power MOSFET ≤ Ω RDS(on) ≤ 7.5 mΩ ≤ Ω ≤ Ω ≤ Ω (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220 (IXTC) E153432 VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 100 V VGSM Transient

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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