All MOSFET. IXTH102N20T Datasheet

 

IXTH102N20T Datasheet and Replacement


   Type Designator: IXTH102N20T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 750 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 102 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 130 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO247
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IXTH102N20T Datasheet (PDF)

 8.1. Size:105K  ixys
 ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf pdf_icon

IXTH102N20T

VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N

 8.2. Size:124K  ixys
 ixth10p50 ixtt10p50 ixth11p50 ixtt11p50.pdf pdf_icon

IXTH102N20T

VDSS ID25 RDS(on)Standard Power MOSFETP-Channel Enhancement ModeIXTH/IXTT 10P50 -500 V -10 A 0.90 Avalanche RatedIXTH/IXTT 11P50 -500 V -11 A 0.75 TO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -500 VVDGR TJ = 25C to 150C; RGS = 1 M -500 VVGS Continuous 20 V(TAB)VGSM Transient 30 VDID25 TC = 25C 10P50 -10 A11P50 -

 8.3. Size:64K  ixys
 ixth10n60 ixth10n60a ixtm10n60 ixtm10n60a.pdf pdf_icon

IXTH102N20T

 8.4. Size:299K  ixys
 ixth10n90 ixtm10n90 ixth12n90 ixtm12n90.pdf pdf_icon

IXTH102N20T

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History: 2SK1571 | IRF7473

Keywords - IXTH102N20T MOSFET datasheet

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