IXTH102N20T Datasheet: MOSFET, N-Ch, 200V, 102A. Full specification with pinout and replacement list

IXTH102N20T Datasheet. Specs and Replacement

Type Designator: IXTH102N20T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 750 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 102 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO247

IXTH102N20T substitution

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IXTH102N20T datasheet

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VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 10N... See More ⇒

8.2. Size:124K ixys
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VDSS ID25 RDS(on) Standard Power MOSFET P-Channel Enhancement Mode IXTH/IXTT 10P50 -500 V -10 A 0.90 Avalanche Rated IXTH/IXTT 11P50 -500 V -11 A 0.75 TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V VGS Continuous 20 V (TAB) VGSM Transient 30 V D ID25 TC = 25 C 10P50 -10 A 11P50 -... See More ⇒

8.3. Size:64K ixys
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