IXTH10N100D2 Datasheet and Replacement
Type Designator: IXTH10N100D2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 695 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO247
IXTH10N100D2 substitution
IXTH10N100D2 Datasheet (PDF)
ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf
VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N
Datasheet: IXTF230N085T , IXTF250N075T , IXTF280N055T , IXTH02N250 , IXTH03N400 , IXTH102N15T , IXTH102N20T , IXTH10N100D , IRF3205 , IXTH10P50P , IXTH10P60 , IXTH110N10L2 , IXTH110N25T , IXTH120P065T , IXTH12N100L , IXTH12N100Q , IXTH12N120 .
History: ME2301S-G | IPP055N03LG
Keywords - IXTH10N100D2 MOSFET datasheet
IXTH10N100D2 cross reference
IXTH10N100D2 equivalent finder
IXTH10N100D2 lookup
IXTH10N100D2 substitution
IXTH10N100D2 replacement
History: ME2301S-G | IPP055N03LG
LIST
Last Update
MOSFET: AP5N10SI | AP5N10MI | AP5N10BSI | AP5N10BI | AP5N06MI | AP5N04MI | AP55N10F | AP50P10P | AP50P10NF | AP50P10D | AP50P04DF | AP50P04D | AP50P03NF | AP50P03DF | AP50P03D | AP30N10D
Popular searches
tl431 datasheet | 2sd526 | 2n4403 transistor equivalent | 2sc1318 | 2n3055 transistor equivalent | 2sc1740 | c3229 | c2078 transistor