IXTH10N100D2 Datasheet. Specs and Replacement

Type Designator: IXTH10N100D2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 695 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO247

IXTH10N100D2 substitution

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IXTH10N100D2 datasheet

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IXTH10N100D2

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 10N... See More ⇒

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Detailed specifications: IXTF230N085T, IXTF250N075T, IXTF280N055T, IXTH02N250, IXTH03N400, IXTH102N15T, IXTH102N20T, IXTH10N100D, IRF3205, IXTH10P50P, IXTH10P60, IXTH110N10L2, IXTH110N25T, IXTH120P065T, IXTH12N100L, IXTH12N100Q, IXTH12N120

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs