IXTH110N25T Datasheet and Replacement
Type Designator: IXTH110N25T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 694 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 170 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: TO247
IXTH110N25T substitution
IXTH110N25T Datasheet (PDF)
ixth10p50 ixtt10p50 ixth11p50 ixtt11p50.pdf
VDSS ID25 RDS(on)Standard Power MOSFETP-Channel Enhancement ModeIXTH/IXTT 10P50 -500 V -10 A 0.90 Avalanche RatedIXTH/IXTT 11P50 -500 V -11 A 0.75 TO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -500 VVDGR TJ = 25C to 150C; RGS = 1 M -500 VVGS Continuous 20 V(TAB)VGSM Transient 30 VDID25 TC = 25C 10P50 -10 A11P50 -
ixth11n80 ixtm11n80 ixth13n80 ixtm13n80.pdf
VDSS ID25 RDS(on)IXTH / IXTM 11N80 800 V 11 A 0.95 MegaMOSTMFETIXTH / IXTM 13N80 800 V 13 A 0.80 N-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 11N80 11
ixth11p50 ixtt11p50.pdf
VDSS = -500 VStandard Power MOSFETID25 = -11 AP-Channel Enhancement ModeIXTH 11P50Avalanche RatedRDS(on) = 0.75 IXTT 11P50TO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -500 VVDGR TJ = 25C to 150C; RGS = 1 M -500 VVGS Continuous 20 V(TAB)VGSM Transient 30 VDID25 TC = 25C -11 AIDM TC = 25C, p
Datasheet: IXTH03N400 , IXTH102N15T , IXTH102N20T , IXTH10N100D , IXTH10N100D2 , IXTH10P50P , IXTH10P60 , IXTH110N10L2 , IRF540N , IXTH120P065T , IXTH12N100L , IXTH12N100Q , IXTH12N120 , IXTH12N140 , IXTH130N10T , IXTH130N15T , IXTH130N20T .
Keywords - IXTH110N25T MOSFET datasheet
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IXTH110N25T replacement
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