All MOSFET. IXTH120P065T Datasheet

 

IXTH120P065T MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTH120P065T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 298 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 185 nC
   trⓘ - Rise Time: 53 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO247

 IXTH120P065T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTH120P065T Datasheet (PDF)

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