All MOSFET. IXTH160N075T Datasheet

 

IXTH160N075T MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTH160N075T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 160 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 112 nC
   trⓘ - Rise Time: 80 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO247

 IXTH160N075T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTH160N075T Datasheet (PDF)

 ..1. Size:184K  ixys
 ixth160n075t ixtq160n075t.pdf

IXTH160N075T IXTH160N075T

Preliminary Technical InformationIXTH160N075T VDSS = 75 VTrenchMVTMIXTQ160N075T ID25 = 160 APower MOSFET RDS(on) 6.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25C to 175C 75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VVGSM Transient 20 VID25 TC = 25C 160 AD (TAB

 6.1. Size:186K  ixys
 ixth160n10t ixtq160n10t.pdf

IXTH160N075T IXTH160N075T

Preliminary Technical InformationIXTH160N10T VDSS = 100 VTrenchMVTMIXTQ160N10T ID25 = 160 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DSVDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient 30 VTO-3P (IXTQ)

 6.2. Size:124K  ixys
 ixth160n15t.pdf

IXTH160N075T IXTH160N075T

Preliminary Technical InformationIXTH160N15T VDSS = 150 VTrenchHVTMID25 = 160 APower MOSFET RDS(on) 9.6 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247VDSS TJ = 25C to 175C 150 VVDGR TJ = 25C to 175C; RGS = 1M 150 VVGSM Transient 30 VID25 TC = 25C 160 AG(TAB)ILRMS Lead Curr

 8.1. Size:43K  ixys
 ixth16p20.pdf

IXTH160N075T IXTH160N075T

IXTH 16P20VDSS = -200 VStandard Power MOSFETID25 = -16 AP-Channel Enhancement ModeRDS(on) = 0.16 Avalanche RatedPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C -200 VVDGR TJ = 25C to 150C; RGS = 1 M -200 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C -16 AIDM TC = 25

 8.2. Size:199K  ixys
 ixth16n50d2 ixtt16n50d2.pdf

IXTH160N075T IXTH160N075T

Advance Technical InformationDepletion Mode VDSX = 500VIXTH16N50D2MOSFET ID(on) > 16AIXTT16N50D2 RDS(on) 240m N-ChannelTO-247 (IXTH)GSymbol Test Conditions Maximum RatingsDD (Tab)SVDSX TJ = 25C to 150C 500 VVDGX TJ = 25C to 150C, RGS = 1M 500 VVGSX Continuous 20 VTO-268 (IXTT)VGSM Transient 30 VPD TC = 2

 8.3. Size:172K  ixys
 ixth16n10d2 ixtt16n10d2.pdf

IXTH160N075T IXTH160N075T

Advance Technical InformationDepletion Mode VDSX = 100VIXTH16N10D2MOSFET ID(on) > 16AIXTT16N10D2 RDS(on) 64m N-ChannelTO-247 (IXTH)GSymbol Test Conditions Maximum RatingsDD (Tab)SVDSX TJ = 25C to 150C 100 VVDGX TJ = 25C to 150C, RGS = 1M 100 VVGSX Continuous 20 VVGSM Transient 30 V TO-268 (IXTT)PD TC = 25C 695

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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