IXTH16P20 Datasheet. Specs and Replacement

Type Designator: IXTH16P20

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 180 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TO247

IXTH16P20 substitution

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IXTH16P20 datasheet

 ..1. Size:43K  ixys
 ixth16p20.pdf pdf_icon

IXTH16P20

IXTH 16P20 VDSS = -200 V Standard Power MOSFET ID25 = -16 A P-Channel Enhancement Mode RDS(on) = 0.16 Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C -200 V VDGR TJ = 25 C to 150 C; RGS = 1 M -200 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C -16 A IDM TC = 25 ... See More ⇒

 8.1. Size:199K  ixys
 ixth16n50d2 ixtt16n50d2.pdf pdf_icon

IXTH16P20

Advance Technical Information Depletion Mode VDSX = 500V IXTH16N50D2 MOSFET ID(on) > 16A IXTT16N50D2 RDS(on) 240m N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSX TJ = 25 C to 150 C 500 V VDGX TJ = 25 C to 150 C, RGS = 1M 500 V VGSX Continuous 20 V TO-268 (IXTT) VGSM Transient 30 V PD TC = 2... See More ⇒

 8.2. Size:186K  ixys
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IXTH16P20

Preliminary Technical Information IXTH160N10T VDSS = 100 V TrenchMVTM IXTQ160N10T ID25 = 160 A Power MOSFET RDS(on) 7.0 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V TO-3P (IXTQ)... See More ⇒

 8.3. Size:184K  ixys
 ixth160n075t ixtq160n075t.pdf pdf_icon

IXTH16P20

Preliminary Technical Information IXTH160N075T VDSS = 75 V TrenchMVTM IXTQ160N075T ID25 = 160 A Power MOSFET RDS(on) 6.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C 75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V ID25 TC = 25 C 160 A D (TAB... See More ⇒

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Detailed specifications: IXTH152N085T, IXTH15N50L2, IXTH160N075T, IXTH160N10T, IXTH160N15T, IXTH16N10D2, IXTH16N20D2, IXTH16N50D2, 8205A, IXTH16P60P, IXTH180N085T, IXTH180N10T, IXTH182N055T, IXTH1N100, IXTH1N250, IXTH200N075T, IXTH200N085T

Keywords - IXTH16P20 MOSFET specs

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