IXTH1N250 Datasheet. Specs and Replacement

Type Designator: IXTH1N250

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 2500 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Electrical Characteristics

Qg ⓘ - Total Gate Charge: 41 nC

tr ⓘ - Rise Time: 2500 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 40 Ohm

Package: TO247

IXTH1N250 substitution

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IXTH1N250 datasheet

 7.1. Size:252K  ixys
 ixta1n200p3hv ixth1n200p3 ixth1n200p3hv.pdf pdf_icon

IXTH1N250

Preliminary Technical Information High Voltage VDSS = 2000V IXTA1N200P3HV Power MOSFET ID25 = 1.0A IXTH1N200P3HV RDS(on) 40 IXTH1N200P3 N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247HV (IXTH) VDSS TJ = 25 C to 150 C 2000 V VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒

 8.1. Size:206K  ixys
 ixth1n450hv.pdf pdf_icon

IXTH1N250

High Voltage VDSS = 4500V IXTT1N450HV Power MOSFET ID25 = 1A IXTH1N450HV RDS(on) 80 N-Channel Enhancement Mode TO-268HV (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247HV (IXTH) VDSS TJ = 25 C to 150 C 4500 V VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V VGSM Transient 30 ... See More ⇒

 8.2. Size:238K  ixys
 ixta1n170dhv ixth1n170dhv.pdf pdf_icon

IXTH1N250

Advance Technical Information Depletion Mode VDSX = 1700V IXTA1N170DHV MOSFET ID(on) > 1A IXTH1N170DHV RDS(on) 16 N-Channel TO-263HV (IXTA) G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25 C to 150 C 1700 V VDGX TJ = 25 C to 150 C, RGS = 1M 1700 V VGSX Continuous 20 V VGSM Transient 30 V ... See More ⇒

 8.3. Size:73K  ixys
 ixth1n100 ixtt1n100.pdf pdf_icon

IXTH1N250

Advance Technical Information VDSS = 1000 V IXTH 1N100 High Voltage MOSFET ID25 = 1.5 A IXTT 1N100 RDS(on) = 11 N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC ... See More ⇒

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Detailed specifications: IXTH16N20D2, IXTH16N50D2, IXTH16P20, IXTH16P60P, IXTH180N085T, IXTH180N10T, IXTH182N055T, IXTH1N100, 2SK3878, IXTH200N075T, IXTH200N085T, IXTH200N10T, IXTH20N50D, IXTH20P50P, IXTH220N055T, IXTH220N075T, IXTH22N50P

Keywords - IXTH1N250 MOSFET specs

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