IXTH200N10T PDF and Equivalents Search

 

IXTH200N10T Specs and Replacement


   Type Designator: IXTH200N10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 550 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 76 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO247
 

 IXTH200N10T substitution

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IXTH200N10T datasheet

 6.1. Size:205K  ixys
ixth200n085t ixtq200n085t.pdf pdf_icon

IXTH200N10T

Preliminary Technical Information IXTH200N085T VDSS = 85 V TrenchMVTM IXTQ200N085T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V ID25 TC = 25 C 20... See More ⇒

 6.2. Size:184K  ixys
ixth200n075t ixtq200n075t.pdf pdf_icon

IXTH200N10T

Preliminary Technical Information IXTH200N075T VDSS = 75 V Trench Gate IXTQ200N075T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V ID25 TC = 25 C 200 A ILRMS ... See More ⇒

 8.1. Size:316K  ixys
ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf pdf_icon

IXTH200N10T

Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine ... See More ⇒

 8.2. Size:105K  ixys
ixth20n60 ixtm20n60.pdf pdf_icon

IXTH200N10T

IXTH 20N60 VDSS = 600 V MegaMOSTMFET IXTM 20N60 ID25 = 20 A RDS(on) = 0.35 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 15N60 15 A TO-204 AE (IXTM) 20N60 20 A IDM TC = 25 C, p... See More ⇒

Detailed specifications: IXTH16P60P , IXTH180N085T , IXTH180N10T , IXTH182N055T , IXTH1N100 , IXTH1N250 , IXTH200N075T , IXTH200N085T , IRF9540N , IXTH20N50D , IXTH20P50P , IXTH220N055T , IXTH220N075T , IXTH22N50P , IXTH230N085T , IXTH240N055T , IXTH24N50L .

Keywords - IXTH200N10T MOSFET specs

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