All MOSFET. IXTH260N055T2 Datasheet

 

IXTH260N055T2 Datasheet and Replacement


   Type Designator: IXTH260N055T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 480 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 260 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 60 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO247
 

 IXTH260N055T2 substitution

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IXTH260N055T2 Datasheet (PDF)

 ..1. Size:166K  ixys
ixth260n055t2.pdf pdf_icon

IXTH260N055T2

Preliminary Technical InformationVDSS = 55VTrenchT2TM PowerIXTH260N055T2ID25 = 260AMOSFET RDS(on) 3.3m N-Channel Enhancement ModeAvalanche RatedTO-247Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C55 VGVDGR TJ = 25C to 175C, RGS = 1M 55 V (TAB)DSVGSM Transient 20 VID25 TC = 25C 260 AG = Gate D =

 8.1. Size:230K  ixys
ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf pdf_icon

IXTH260N055T2

IXTH26N60P VDSS = 600 VPolarHVTMIXTQ26N60P ID25 = 26 APower MOSFET IXTT26N60P RDS(on) 270 m N-Channel Enhancement ModeIXTV26N60PAvalanche RatedTO-247 (IXTH)IXTV26N60PSGDSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 V TO-3P (IXTQ)VDGR TJ = 25C to 150C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Tran

 8.2. Size:184K  ixys
ixta26p20p ixth26p20p ixtp26p20p ixtq26p20p.pdf pdf_icon

IXTH260N055T2

Preliminary Technical InformationIXTA26P20P VDSS = - 200VPolarPTMIXTH26P20P ID25 = - 26APower MOSFET IXTP26P20P RDS(on) 170m P-Channel Enhancement ModeAvalanche RatedIXTQ26P20PTO-263 (IXTA) TO-247 (IXTH) TO-220 (IXTP)GSGD(TAB)D(TAB)GD(TAB)DS DSSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 175

 9.1. Size:202K  ixys
ixth2n300p3hv ixtt2n300p3hv.pdf pdf_icon

IXTH260N055T2

Advance Technical InformationHigh Voltage VDSS = 3000VIXTT2N300P3HVPower MOSFETID25 = 2AIXTH2N300P3HV RDS(on) 21 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 3000 VVDGR TJ = 25C to 150C, RGS = 1M 3000 VVGSS Continuous 20 VV

Datasheet: IXTH220N075T , IXTH22N50P , IXTH230N085T , IXTH240N055T , IXTH24N50L , IXTH24N50Q , IXTH24P20 , IXTH250N075T , 4N60 , IXTH26N60P , IXTH26P20P , IXTH280N055T , IXTH28N50Q , IXTH2R4N120P , IXTH300N04T2 , IXTH30N25 , IXTH30N50L .

History: 7NM70L-TF1-T | NVD3055-094 | 2SK2294 | UTT6NP10G-S08-R | SIA537EDJ | VS3610AI | QM2N7002E3K1

Keywords - IXTH260N055T2 MOSFET datasheet

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