3SK139Q MOSFET. Datasheet pdf. Equivalent

   Type Designator: 3SK139Q
   Marking Code: 3BQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 0.03 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   Cossⓘ - Output Capacitance: 1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 83 Ohm
   Package: MINI-TYPE

3SK139Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

3SK139Q Datasheet (PDF)

..1. Size:510K 1
3sk139q 3sk139p.pdf

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten

9.1. Size:127K 1
3sk133a.pdf

9.2. Size:39K 1
3sk135a.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR3SK135ARF AMP. FOR UHF TV TUNERN-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR4PIN MINI MOLDPACKAGE DIMENSIONSFEATURESin millimeters Suitable for use as RF amplifier in UHF TV tuner.+0.2 Low Crss : 0.02 pF TYP.2.80.3 +0.2 High Gps : 18 dB TYP. 1.50.1 Low NF : 2.7 dB TYP.+0.1 ABSOLUTE MAXIMUM RATI

9.3. Size:69K 1
3sk137v.pdf

9.4. Size:117K 1
3sk132a.pdf

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3sk127 3sk128 3sk129 3sk132 3sk133 3sk141 3sk156.pdf

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3sk134b.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR3SK134BRF AMP. FOR UHF TV TUNERN-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR4 PINS MINI MOLDFEATURESPACKAGE DIMENSIONS High Power Gain : Gps = 23.0 dB TYP. (@ = 900 MHz) (Unit : mm) Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz)2.8+0.2 0.3 Suitable for use as RF amplifier in UHF TV tuner.1.5+0.2 0.1

9.7. Size:60K 1
3sk137.pdf