IXTH30N60L2 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTH30N60L2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 540 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 335 nC
trⓘ - Rise Time: 710 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TO247
IXTH30N60L2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTH30N60L2 Datasheet (PDF)
ixth30n60p ixtq30n60p ixtt30n60p ixtv30n60p.pdf
IXTH 30N60P VDSS = 600 VPolarHVTMIXTQ 30N60P ID25 = 30 APower MOSFET IXTT 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXTV 30N60PAvalanche RatedIXTV 30N60PSSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Transient
ixth30n60p ixtq30n60p ixtt30n60p ixtv30n60p ixtv30n60ps.pdf
IXTH 30N60P VDSS = 600 VPolarHVTMIXTQ 30N60P ID25 = 30 APower MOSFET IXTT 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXTV 30N60PAvalanche RatedIXTV 30N60PSSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Transient
ixth30n50l2-ixtq30n50l2-ixtt30n50l2.pdf
IXTH30N50L2 VDSS = 500VLinear L2TM PowerIXTQ30N50L2 ID25 = 30AMOSFET with extended IXTT30N50L2 RDS(on) 200m FBSOADDDDO DON-Channel Enhancement ModeTO-247 (IXTH)RGiwwG OO(TAB)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VTO-3P (IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continu
ixth30n50p ixtq30n50p ixtt30n50p ixtv30n50p.pdf
VDSS = 500 VIXTH 30N50PPolarHVTMID25 = 30 AIXTQ 30N50PPower MOSFET RDS(on) 200 m IXTT 30N50PN-Channel Enhancement ModeIXTV 30N50PAvalanche RatedIXTV 30N50PSTO-247 AD (IXTH)(TAB)Symbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS Continuo
ixth30n45 ixth30n50.pdf
Preliminary Data SheetVDSS ID25 RDS(on)MegaMOSTMFETIXTH 30N45 450 V 30 A 0.16 N-Channel Enhancement ModeIXTH 30N50 500 V 30 A 0.17 TO-247 ADSymbol Test Conditions Maximum RatingsD (TAB)30N45 450 VVDSS TJ = 25C to 150C 30N50 500 V30N45 450 VVDGR TJ = 25C to 150C; RGS = 1 M 30N50 500 VTO-247 SMD( ...S )VGS Continuous 20 VVGSM Transient 30 VID
ixth30n25.pdf
Advance Technical InformationStandard VDSS = 250 VIXTH 30N25ID (cont) = 30 APower MOSFETRDS(on) = 75 mN-Channel Enhancement ModeSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1 M 250 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C30 AIDM TC = 25C, pulse wid
ixth30n50l.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXTH30N50LFEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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