IXTH360N055T2 Datasheet. Specs and Replacement

Type Designator: IXTH360N055T2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 935 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 360 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 78 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: TO247

IXTH360N055T2 substitution

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IXTH360N055T2 datasheet

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IXTH360N055T2

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IXTH360N055T2

IXTH 36N50P VDSS = 500 V PolarHVTM IXTQ 36N50P ID25 = 36 A Power MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50P N-Channel Enhancement Mode Avalanche Rated IXTV 36N50PS TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V (TAB) D S VGS Continuous 30 V VGS... See More ⇒

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IXTH360N055T2

IXTH 36N50P VDSS = 500 V PolarHVTM IXTQ 36N50P ID25 = 36 A Power MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50P N-Channel Enhancement Mode Avalanche Rated IXTV 36N50PS TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V (TAB) D S VGS Continuous 30 V VGS... See More ⇒

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IXTH360N055T2

Advance Technical Information IXTH 36P10 Standard Power MOSFET VDSS = -100 V ID25 = -36 A P-Channel Enhancement Mode RDS(on) = 75 m Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 25 C to 150 C; RGS = 1 M -100 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C -36 A IDM TC ... See More ⇒

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Detailed specifications: IXTH300N04T2, IXTH30N25, IXTH30N50L, IXTH30N50L2, IXTH30N50P, IXTH30N60L2, IXTH30N60P, IXTH32P20T, 4N60, IXTH36N50P, IXTH36P10, IXTH36P15P, IXTH3N100P, IXTH3N120, IXTH3N150, IXTH40N50L2, IXTH41N25

Keywords - IXTH360N055T2 MOSFET specs

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