All MOSFET. IXTH360N055T2 Datasheet

 

IXTH360N055T2 Datasheet and Replacement


   Type Designator: IXTH360N055T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 935 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 360 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 78 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO247
 

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IXTH360N055T2 Datasheet (PDF)

 ..1. Size:181K  ixys
 ixth360n055t2 ixtt360n055t2.pdf pdf_icon

IXTH360N055T2

Preliminary Technical InformationVDSS = 55VTrenchT2TM PowerIXTH360N055T2ID25 = 360AMOSFET IXTT360N055T2 RDS(on) 2.4m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXTH)Symbol Test Conditions Maximum RatingsGDVDSS TJ = 25C to 175C55 V (TAB)SVDGR TJ = 25C to 175C, RGS = 1M 55 VVGSM Transient

 8.1. Size:361K  ixys
 ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p.pdf pdf_icon

IXTH360N055T2

IXTH 36N50P VDSS = 500 VPolarHVTMIXTQ 36N50P ID25 = 36 APower MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50PN-Channel Enhancement ModeAvalanche Rated IXTV 36N50PSTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V(TAB)DSVGS Continuous 30 VVGS

 8.2. Size:402K  ixys
 ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p ixtv36n50ps.pdf pdf_icon

IXTH360N055T2

IXTH 36N50P VDSS = 500 VPolarHVTMIXTQ 36N50P ID25 = 36 APower MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50PN-Channel Enhancement ModeAvalanche Rated IXTV 36N50PSTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V(TAB)DSVGS Continuous 30 VVGS

 8.3. Size:79K  ixys
 ixth36p10.pdf pdf_icon

IXTH360N055T2

Advance Technical InformationIXTH 36P10Standard Power MOSFETVDSS = -100 VID25 = -36 AP-Channel Enhancement ModeRDS(on) = 75 mAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C -100 VVDGR TJ = 25C to 150C; RGS = 1 M -100 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C -36 AIDM TC

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Datasheet: IXTH300N04T2 , IXTH30N25 , IXTH30N50L , IXTH30N50L2 , IXTH30N50P , IXTH30N60L2 , IXTH30N60P , IXTH32P20T , 10N65 , IXTH36N50P , IXTH36P10 , IXTH36P15P , IXTH3N100P , IXTH3N120 , IXTH3N150 , IXTH40N50L2 , IXTH41N25 .

History: WSF3012 | WFU2N60B | BUK9Y09-40B | DMP2035UVT | AOL1436 | 2SJ531 | SWN2N65K

Keywords - IXTH360N055T2 MOSFET datasheet

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