IXTH36N50P Specs and Replacement
Type Designator: IXTH36N50P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 540
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 36
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 400
nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17
Ohm
Package:
TO247
-
MOSFET ⓘ Cross-Reference Search
IXTH36N50P datasheet
..1. Size:361K ixys
ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p.pdf 
IXTH 36N50P VDSS = 500 V PolarHVTM IXTQ 36N50P ID25 = 36 A Power MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50P N-Channel Enhancement Mode Avalanche Rated IXTV 36N50PS TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V (TAB) D S VGS Continuous 30 V VGS... See More ⇒
..2. Size:402K ixys
ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p ixtv36n50ps.pdf
IXTH 36N50P VDSS = 500 V PolarHVTM IXTQ 36N50P ID25 = 36 A Power MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50P N-Channel Enhancement Mode Avalanche Rated IXTV 36N50PS TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V (TAB) D S VGS Continuous 30 V VGS... See More ⇒
8.2. Size:79K ixys
ixth36p10.pdf
Advance Technical Information IXTH 36P10 Standard Power MOSFET VDSS = -100 V ID25 = -36 A P-Channel Enhancement Mode RDS(on) = 75 m Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 25 C to 150 C; RGS = 1 M -100 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C -36 A IDM TC ... See More ⇒
9.1. Size:142K ixys
ixth30n50l2-ixtq30n50l2-ixtt30n50l2.pdf
IXTH30N50L2 VDSS = 500V Linear L2TM Power IXTQ30N50L2 ID25 = 30A MOSFET with extended IXTT30N50L2 RDS(on) 200m FBSOA D D D D O D O N-Channel Enhancement Mode TO-247 (IXTH) RGi w w G O O (TAB) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C, RGS = 1M 500 V VGSS Continu... See More ⇒
9.2. Size:131K ixys
ixth3n120.pdf
High Voltage VDSS = 1200 V IXTH 3N120 Power MOSFETs ID25 = 3 A N-Channel Enhancement Mode VDS(on) = 4.5 Avalanche Rated, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 VDSS TJ = 25 C to 150 C 3N120 1200 V 3N110 1100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 3N120 1200 V 3N110 1100 V VGS Continuous 20 V G D (TAB) D VGSM Transient 30 V... See More ⇒
9.3. Size:107K ixys
ixth35n30 ixth40n30 ixtm40n30.pdf
VDSS ID25 RDS(on) MegaMOSTMFET IXTH 35N30 300 V 35 A 0.10 IXTH 40N30 300 V 40 A 0.085 IXTM 40N30 300 V 40 A 0.088 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V D (TAB) VGSM Tra... See More ⇒
9.4. Size:152K ixys
ixth3n150.pdf
High Voltage VDSS = 1500V IXTH3N150 ID25 = 3A Power MOSFET RDS(on) 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1500 V VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V G D Tab VGSS Continuous 30 V S VGSM Transient 40 V G = Gate D = Dr... See More ⇒
9.5. Size:336K ixys
ixth30n50p ixtq30n50p ixtt30n50p ixtv30n50p.pdf
VDSS = 500 V IXTH 30N50P PolarHVTM ID25 = 30 A IXTQ 30N50P Power MOSFET RDS(on) 200 m IXTT 30N50P N-Channel Enhancement Mode IXTV 30N50P Avalanche Rated IXTV 30N50PS TO-247 AD (IXTH) (TAB) Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS Continuo... See More ⇒
9.6. Size:40K ixys
ixth30n45 ixth30n50.pdf
Preliminary Data Sheet VDSS ID25 RDS(on) MegaMOSTMFET IXTH 30N45 450 V 30 A 0.16 N-Channel Enhancement Mode IXTH 30N50 500 V 30 A 0.17 TO-247 AD Symbol Test Conditions Maximum Ratings D (TAB) 30N45 450 V VDSS TJ = 25 C to 150 C 30N50 500 V 30N45 450 V VDGR TJ = 25 C to 150 C; RGS = 1 M 30N50 500 V TO-247 SMD ( ...S ) VGS Continuous 20 V VGSM Transient 30 V ID... See More ⇒
9.7. Size:212K ixys
ixth32n65x ixtp32n65x ixtq32n65x.pdf
Preliminary Technical Information X-Class VDSS = 650V IXTP32N65X Power MOSFET ID25 = 32A IXTQ32N65X RDS(on) 135m IXTH32N65X N-Channel Enhancement Mode TO-220AB (IXTP) G D Tab S Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V G VGSS Continuous 30 V... See More ⇒
9.8. Size:150K ixys
ixta3n100p ixth3n100p ixtp3n100p.pdf
IXTA3N100P VDSS = 1000V Polar VHVTM IXTH3N100P ID25 = 3A Power MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 1000 V TO-220 (IXTP) VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Continuous 20 V VGSM Transient 30 V (TAB) ... See More ⇒
9.10. Size:175K ixys
ixta3n120 ixtp3n120 ixth3n120.pdf
High Voltage VDSS = 1200V IXTA3N120 Power MOSFET ID25 = 3A IXTP3N120 RDS(on) 4.5 IXTH3N120 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V VGSS Continuous... See More ⇒
9.11. Size:69K ixys
ixth30n25.pdf
Advance Technical Information Standard VDSS = 250 V IXTH 30N25 ID (cont) = 30 A Power MOSFET RDS(on) = 75 m N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C30 A IDM TC = 25 C, pulse wid... See More ⇒
9.13. Size:55K ixys
ixth35n30 ixtm35n30 ixth40n30 ixtm40n30.pdf
VDSS ID25 RDS(on) IXTH/IXTM 35 N30 300 V 35 A 0.10 MegaMOSTMFET IXTH 40 N30 300 V 40 A 0.085 IXTM 40 N30 300 V 40 A 0.088 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V VGSM Tra... See More ⇒
9.14. Size:113K ixys
ixth34n65x2.pdf
Advance Technical Information X2-Class VDSS = 650V IXTH34N65X2 Power MOSFET ID25 = 34A RDS(on) 105m N-Channel Enhancement Mode Avalanche Rated TO-247 G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25 C to 150 C 650 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S = Source Tab = Drain VGSS Contin... See More ⇒
9.15. Size:283K ixys
ixtp34n65x2 ixth34n65x2.pdf
X2-Class VDSS = 650V IXTP34N65X2 Power MOSFET ID25 = 34A IXTH34N65X2 RDS(on) 96m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D S D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V TO-247 VGSS Continuous 30 V (IXTH) VGSM Transient 40 V ID... See More ⇒
9.16. Size:201K ixys
ixth3n200p3hv ixtt3n200p3hv.pdf
Advance Technical Information High Voltage VDSS = 2000V IXTT3N200P3HV Power MOSFET ID25 = 3A IXTH3N200P3HV RDS(on) 8 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 2000 V VDGR TJ = 25 C to 150 C, RGS = 1M 2000 V VGSS Continuous 20 V VG... See More ⇒
9.17. Size:211K inchange semiconductor
ixth30n50l.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXTH30N50L FEATURES With TO-247 packaging With low gate drive requirements Low switching loss Low on-state resistance Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒
9.18. Size:261K inchange semiconductor
ixth34n65x2.pdf
isc N-Channel MOSFET Transistor IXTH34N65X2 FEATURES With TO-247 packaging With low gate drive requirements Low switching loss Low on-state resistance Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V... See More ⇒
Detailed specifications: IXTH30N25
, IXTH30N50L
, IXTH30N50L2
, IXTH30N50P
, IXTH30N60L2
, IXTH30N60P
, IXTH32P20T
, IXTH360N055T2
, IRFP250
, IXTH36P10
, IXTH36P15P
, IXTH3N100P
, IXTH3N120
, IXTH3N150
, IXTH40N50L2
, IXTH41N25
, IXTH420N04T2
.
Keywords - IXTH36N50P MOSFET specs
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IXTH36N50P pdf lookup
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