All MOSFET. IXTH3N150 Datasheet

 

IXTH3N150 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTH3N150

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 1500 V

Maximum Drain Current |Id|: 3 A

Rise Time (tr): 900 nS

Maximum Drain-Source On-State Resistance (Rds): 7.3 Ohm

Package: TO247

IXTH3N150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXTH3N150 说明书

3.1. ixth3n120.pdf Size:131K _ixys

IXTH3N150
IXTH3N150

High Voltage VDSS = 1200 V IXTH 3N120 Power MOSFETs ID25 = 3 A N-Channel Enhancement Mode VDS(on) = 4.5 ? Avalanche Rated, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 VDSS TJ = 25C to 150C 3N120 1200 V 3N110 1100 V VDGR TJ = 25C to 150C; RGS = 1 M? 3N120 1200 V 3N110 1100 V VGS Continuous 20 V G D (TAB) D VGSM Transient 30 V S ID25 TC

5.1. ixth36p10.pdf Size:79K _ixys

IXTH3N150
IXTH3N150

Advance Technical Information IXTH 36P10 Standard Power MOSFET VDSS = -100 V ID25 = -36 A P-Channel Enhancement Mode ? RDS(on) = 75 m? ? ? ? Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25C to 150C -100 V VDGR TJ = 25C to 150C; RGS = 1 M? -100 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25C -36 A IDM TC = 25C, pulse width li

5.2. ixth35n30_ixtm35n30_ixth40n30_ixtm40n30.pdf Size:55K _ixys

IXTH3N150
IXTH3N150

VDSS ID25 RDS(on) Ω Ω IXTH/IXTM 35 N30 300 V 35 A 0.10 Ω Ω Ω MegaMOSTMFET Ω IXTH 40 N30 300 V 40 A 0.085 Ω Ω Ω Ω Ω IXTM 40 N30 300 V 40 A 0.088 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Tra

5.3. ixth30n50l2-ixtq30n50l2-ixtt30n50l2.pdf Size:142K _ixys

IXTH3N150
IXTH3N150

IXTH30N50L2 VDSS = 500V Linear L2TM Power IXTQ30N50L2 ID25 = 30A MOSFET with extended ? ? IXTT30N50L2 RDS(on) ? ? ? 200m? ? ? ? ? FBSOA D D D D O D O N-Channel Enhancement Mode TO-247 (IXTH) RGi w w G O O (TAB) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V TO-3P (IXTQ) VDGR TJ = 25C to 150C, RGS = 1M? 500 V VGSS Continuous 20 V VGSM Transie

5.4. ixth360n055t2_ixtt360n055t2.pdf Size:181K _ixys

IXTH3N150
IXTH3N150

Preliminary Technical Information VDSS = 55V TrenchT2TM Power IXTH360N055T2 ID25 = 360A MOSFET IXTT360N055T2 ? ? RDS(on) ? ? ? 2.4m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25C to 175C55 V (TAB) S VDGR TJ = 25C to 175C, RGS = 1M? 55 V VGSM Transient 20 V TO-268 (IXTT) I

5.5. ixth30n60p_ixtq30n60p_ixtt30n60p_ixtv30n60p.pdf Size:352K _ixys

IXTH3N150
IXTH3N150

IXTH 30N60P VDSS = 600 V PolarHVTM IXTQ 30N60P ID25 = 30 A Power MOSFET ? ? ? ? IXTT 30N60P RDS(on) ? 240 m? ? ? ? ? N-Channel Enhancement Mode IXTV 30N60P Avalanche Rated IXTV 30N60PS Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGSS Continuous 30 V VGSM Transient 40 V G D (TAB) D ID25 TC =

5.6. ixth30n45_ixth30n50.pdf Size:40K _ixys

IXTH3N150
IXTH3N150

Preliminary Data Sheet VDSS ID25 RDS(on) MegaMOSTMFET IXTH 30N45 450 V 30 A 0.16 Ω N-Channel Enhancement Mode IXTH 30N50 500 V 30 A 0.17 Ω TO-247 AD Symbol Test Conditions Maximum Ratings D (TAB) 30N45 450 V VDSS TJ = 25°C to 150°C 30N50 500 V 30N45 450 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 30N50 500 V TO-247 SMD ( ...S ) VGS Continuous ±20 V VGSM Transient ±30 V ID

5.7. ixth30n25.pdf Size:69K _ixys

IXTH3N150
IXTH3N150

Advance Technical Information Standard VDSS = 250 V IXTH 30N25 ID (cont) = 30 A Power MOSFET Ω RDS(on) = 75 mΩ Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 250 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C30 A IDM TC = 25°C, pulse wid

5.8. ixth30n50p_ixtq30n50p_ixtt30n50p_ixtv30n50p.pdf Size:336K _ixys

IXTH3N150
IXTH3N150

VDSS = 500 V IXTH 30N50P PolarHVTM ID25 = 30 A IXTQ 30N50P Power MOSFET ? ? RDS(on) ? 200 m? ? ? ? ? ? ? IXTT 30N50P N-Channel Enhancement Mode IXTV 30N50P Avalanche Rated IXTV 30N50PS TO-247 AD (IXTH) (TAB) Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGSS Continuous 30 V VGSM Transient 40

5.9. ixth35n30_ixth40n30_ixtm40n30.pdf Size:107K _ixys

IXTH3N150
IXTH3N150

VDSS ID25 RDS(on) MegaMOSTMFET ? ? IXTH 35N30 300 V 35 A 0.10 ? ? ? ? IXTH 40N30 300 V 40 A 0.085 ? ? ? ? ? IXTM 40N30 300 V 40 A 0.088 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C; RGS = 1 M? 300 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25C 35N30 35 A

5.10. ixth36n50p_ixtq36n50p_ixtt36n50p_ixtv36n50p.pdf Size:361K _ixys

IXTH3N150
IXTH3N150

IXTH 36N50P VDSS = 500 V PolarHVTM IXTQ 36N50P ID25 = 36 A Power MOSFET ? ? IXTT 36N50P RDS(on) ? 170 m? ? ? ? ? ? ? IXTV 36N50P N-Channel Enhancement Mode Avalanche Rated IXTV 36N50PS TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V (TAB) D S VGS Continuous 30 V VGSM Transient 40 V TO-247 (IXT

Datasheet: IXTH30N60P , IXTH32P20T , IXTH360N055T2 , IXTH36N50P , IXTH36P10 , IXTH36P15P , IXTH3N100P , IXTH3N120 , IRF460 , IXTH40N50L2 , IXTH41N25 , IXTH420N04T2 , IXTH440N055T2 , IXTH44P15T , IXTH450P2 , IXTH460P2 , IXTH48N20 .

 


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