All MOSFET. IXTH500N04T2 Datasheet

 

IXTH500N04T2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTH500N04T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1000 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 500 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 405 nC
   trⓘ - Rise Time: 84 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: TO247

 IXTH500N04T2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTH500N04T2 Datasheet (PDF)

 ..1. Size:187K  ixys
 ixth500n04t2 ixtt500n04t2.pdf

IXTH500N04T2 IXTH500N04T2

Advance Technical InformationTrenchT2TM VDSS = 40VIXTH500N04T2ID25 = 500APower MOSFETIXTT500N04T2 RDS(on) 1.6m N-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Fast Intrinsic DiodeGDD (Tab)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C40 VVDGR TJ = 25C to 175C, RGS = 1M 40 VTO-268 (IXTT)VGSM T

 8.1. Size:230K  ixys
 ixta50n25t ixtq50n25t ixtp50n25t ixth50n25t.pdf

IXTH500N04T2 IXTH500N04T2

IXTA50N25T IXTQ50N25TTrench Gate VDSS = 250VIXTP50N25T IXTH50N25TID25 = 50APower MOSFET RDS(on) 60m N-Channel Enhancement ModeTO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ)G GDSSGD (Tab)DD (Tab) D (Tab)STO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C, RGS = 1M

 8.2. Size:111K  ixys
 ixth50n20 ixtm50n20.pdf

IXTH500N04T2 IXTH500N04T2

IXTH 50N20 VDSS = 200 VMegaMOSTMFETIXTM 50N20 ID25 = 50 ARDS(on) = 45 mN-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 M 200 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C50 ATO-204 AE (IXTM)IDM TC = 25C, pulse width limited b

 8.3. Size:378K  ixys
 ixth42n20 ixtm42n20 ixth50n20 ixtm50n20.pdf

IXTH500N04T2 IXTH500N04T2

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