All MOSFET. IXTH68P20T Datasheet

 

IXTH68P20T MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTH68P20T

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 568 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 68 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 245 nS

Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm

Package: TO247

IXTH68P20T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTH68P20T Datasheet (PDF)

4.1. ixth68n20 ixtk74n20.pdf Size:128K _ixys

IXTH68P20T
IXTH68P20T

VDSS ID25 RDS(on) High Current IXTK 74 N20 200 V 74 A 35 mW MegaMOSTMFET IXTH 68 N20 200 V 68 A 35 mW N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings TO-247AD (IXTH) VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 200 V D (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 74N20 74 A 68N20 68 A TO-264 AA (I

5.1. ixtt60n20l2-ixtq60n20l2-ixth60n20l2.pdf Size:149K _ixys

IXTH68P20T
IXTH68P20T

Advance Technical Information Linear L2TM Power VDSS = 200V IXTT60N20L2 MOSFET w/ Extended ID25 = 60A IXTQ60N20L2 ? ? RDS(on) ? ? ? 45m? ? ? ? ? FBSOA IXTH60N20L2 TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V TO-3P (IXTQ) VDGR TJ = 25C to 150C, RGS = 1M? 200 V VGSS Continuous 20 V G

5.2. ixta6n100d2-ixtp6n100d2-ixth6n100d2.pdf Size:184K _ixys

IXTH68P20T
IXTH68P20T

Preliminary Technical Information Depletion Mode VDSX = 1000V IXTA6N100D2 MOSFET ID(on) > 6A IXTP6N100D2 ? ? RDS(on) ? 2.2? ? ? ? ? ? ? IXTH6N100D2 N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSX TJ = 25C to 150C 1000 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25C 300 W G D D (Tab) TJ - 55 ... +150 C S TJM 1

5.3. ixta6n50d2 ixtp6n50d2 ixth6n50d2.pdf Size:206K _ixys

IXTH68P20T
IXTH68P20T

Preliminary Technical Information Depletion Mode VDSX = 500V IXTA6N50D2 MOSFET ID(on) > 6A IXTP6N50D2 ≤ Ω RDS(on) ≤ 500mΩ ≤ Ω ≤ Ω ≤ Ω IXTH6N50D2 N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSX TJ = 25°C to 150°C 500 V VGSX Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 300 W G D D (Tab) TJ - 55 .

5.4. ixth6n80-a ixtm6n80-a.pdf Size:102K _ixys

IXTH68P20T
IXTH68P20T

VDSS ID25 RDS(on) Standard Ω IXTH / IXTM 6N80 800 V 6 A 1.8 Ω Ω Ω Ω Power MOSFET Ω IXTH / IXTM 6N80A 800 V 6 A 1.4 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C6 A TO

5.5. ixth6n150.pdf Size:116K _ixys

IXTH68P20T
IXTH68P20T

Advance Technical Information High Voltage VDSS = 1500V IXTH6N150 ID25 = 6A Power MOSFET ? ? RDS(on) ? 3.5? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M? 1500 V G D Tab VGSS Continuous 20 V S VGSM Transient 30 V G = Gate D = Drain I

5.6. ixth6n120 ixtt6n120.pdf Size:588K _ixys

IXTH68P20T
IXTH68P20T

IXTH 6N120 VDSS = 1200 V High Voltage IXTT 6N120 ID25 = 6 A Power MOSFET ? RDS(on) = 2.6 ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C; RGS = 1 M? 1200 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25C6 A IDM TC = 25C, pulse

5.7. ixth67n10 ixtm67n10 ixth75n10 ixtm75n10 ixtt75n10.pdf Size:579K _ixys

IXTH68P20T
IXTH68P20T

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 67N10 ? 100 V 67 A 25 m? ? ? ? IXTH / IXTM 75N10 ? 100 V 75 A 20 m? ? ? ? IXTT 75N10 N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25C to 150C 100 V VDGR TJ = 25C to 150C; RGS = 1 M? 100 V TO-204 AE (IXTM) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 67N10 67 A 7

5.8. ixth6n90-a ixtm6n90-a.pdf Size:104K _ixys

IXTH68P20T
IXTH68P20T

VDSS ID25 RDS(on) Standard Ω IXTH / IXTM 6N90 900 V 6 A 1.8 Ω Ω Ω Ω Power MOSFET Ω IXTH / IXTM 6N90A 900 V 6 A 1.4 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900 V D (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C6 A T

Datasheet: IXTH50N30 , IXTH50P085 , IXTH50P10 , IXTH52P10P , IXTH60N10 , IXTH60N15 , IXTH60N20L2 , IXTH60N25 , APT50M38JLL , IXTH6N100D2 , IXTH6N120 , IXTH6N150 , IXTH6N50D2 , IXTH72N20 , IXTH75N10L2 , IXTH75N15 , IXTH76N25T .

 


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