All MOSFET. IXTK170P10P Datasheet

 

IXTK170P10P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTK170P10P

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 890 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 170 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 240 nC

Rise Time (tr): 176 nS

Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm

Package: TO264

IXTK170P10P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTK170P10P Datasheet (PDF)

1.1. ixtk170p10p ixtx170p10p.pdf Size:177K _ixys

IXTK170P10P
IXTK170P10P

PolarPTM VDSS = -100V IXTK170P10P ID25 = -170A Power MOSFET IXTX170P10P ? ? RDS(on) ? 12m? ? ? ? ? ? ? P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C -100 V VDGR TJ = 25C to 150C, RGS = 1M? -100 V G D (TAB) S VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C -170 A PLUS247 (IXTX) ILRMS Lead

4.1. ixtk17n120l ixtx17n120l.pdf Size:88K _ixys

IXTK170P10P
IXTK170P10P

Advance Technical Information IXTK17N120L VDSS = 1200 V Linear Power MOSFET IXTX17N120L ID25 = 17 A With Extended FBSOA ? ? RDS(on) ? ? ? 0.99 ? ? ? ? ? N-Channel Enhancement Mode TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C; RGS = 1 M? 1200 V G D VGS Continuous 30 V S (TAB) VGSM Transient 40 V ID25 TC = 25C 17

 5.1. ixtk120p20t ixtx120p20t.pdf Size:178K _ixys

IXTK170P10P
IXTK170P10P

Advance Technical Information TrenchPTM VDSS = - 200V IXTK120P20T Power MOSFETs ID25 = - 120A IXTX120P20T ≤ Ω RDS(on) ≤ 30mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 300ns ≤ ≤ ≤ P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C - 200 V D S VDGR TJ = 25°C to 150°C, RGS

5.2. ixtk150n15p ixtq150n15p.pdf Size:252K _ixys

IXTK170P10P
IXTK170P10P

IXTK 150N15P PolarHTTM VDSS = 150 V IXTQ 150N15P Power MOSFET ID25 = 150 A ? ? RDS(on)? 13 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 150 V G D (TAB) VGS Continuous 20 V D S VGSM Transient 30 V ID25 TC = 25 C 150 A TO-3P (IXTQ) ID(RMS

 5.3. ixtk100n25p ixtt100n25p ixtq100n25p.pdf Size:274K _ixys

IXTK170P10P
IXTK170P10P

IXTK 100N25P VDSS = 250 V PolarHTTM IXTQ 100N25P ID25 = 100 A Power MOSFET ? ? IXTT 100N25P RDS(on)? 27 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 250 V VGSS Continuous 20 V G D (TAB) DS VGSM Transient 30 V ID25 TC = 25 C 100 A ID(RMS) Ex

5.4. ixtk140n20p.pdf Size:162K _ixys

IXTK170P10P
IXTK170P10P

VDSS = 200 V IXTK 140N20P PolarHTTM ID25 = 140 A Power MOSFET ? ? RDS(on) ? 18 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 200 V VGS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C 140 A D (TAB) S ID(RMS) External lead current limit

 5.5. ixtk120n20p ixtq120n20p.pdf Size:191K _ixys

IXTK170P10P
IXTK170P10P

IXTK 120N20P PolarHTTM VDSS = 200 V IXTQ 120N20P Power MOSFET ID25 = 120 A ? ? RDS(on)? 22 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 200 V G VGS Continuous 20 V D (TAB) S VGSM Transient 30 V ID25 TC = 25 C 120 A TO-3P (IXTQ) ID(RMS)

5.6. ixtk180n15p.pdf Size:163K _ixys

IXTK170P10P
IXTK170P10P

VDSS = 150 V IXTK 180N15P PolarHTTM ID25 = 180 A Power MOSFET ? ? RDS(on) ? 10 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V VDSS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C 180 A D (TAB) S ID(RMS) External lead current limit

5.7. ixtk120n25p.pdf Size:163K _ixys

IXTK170P10P
IXTK170P10P

VDSS = 250 V IXTK 120N25P PolarHTTM ID25 = 120 A Power MOSFET ? ? RDS(on) ? 24 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 175 C 250 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 250 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 120 A G D (TAB) ID(RMS) External lead current limit 75

5.8. ixtk102n65x2 ixtx102n65x2.pdf Size:193K _ixys

IXTK170P10P
IXTK170P10P

Preliminary Technical Information X2-Class VDSS = 650V IXTK102N65X2 Power MOSFET ID25 = 102A IXTX102N65X2   RDS(on)  30m       N-Channel Enhancement Mode Avalanche Rated TO-264P (IXTK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 150C 650 V D Tab VDGR TJ = 25C to 150C, RGS = 1M 650 V S VGSS Contin

5.9. ixtk102n30p.pdf Size:225K _ixys

IXTK170P10P
IXTK170P10P

VDSS = 300 V IXTK 102N30P PolarHTTM ID25 = 102 A Power MOSFET ? ? RDS(on) ? 33 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 300 V VGSS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C 102 A D (TAB) S ID(RMS) External lead current limit

5.10. ixtk120n65x2 ixtx120n65x2.pdf Size:159K _ixys

IXTK170P10P
IXTK170P10P

Advance Technical Information X2-Class VDSS = 650V IXTK120N65X2 Power MOSFET ID25 = 120A IXTX120N65X2   RDS(on)  24m       N-Channel Enhancement Mode Avalanche Rated TO-264P (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 150C 650 V D Tab VDGR TJ = 25C to 150C, RGS = 1M 650 V S VGSS Continuous  30 V PLUS247 (IX

5.11. ixtk110n20l2 ixtx110n20l2.pdf Size:158K _ixys

IXTK170P10P
IXTK170P10P

Advance Technical Information LinearL2TM Power VDSS = 200V IXTK110N20L2 MOSFET w/Extended ID25 = 110A IXTX110N20L2 FBSOA ? RDS(on) < 24m? ? ? ? N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C, RGS = 1M? 200 V G D (TAB) S VGSS Continuous 20 V VGSM Transien

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