IXTK22N100L Datasheet. Specs and Replacement
Type Designator: IXTK22N100L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 700 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1000 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO264
IXTK22N100L substitution
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IXTK22N100L datasheet
ixtk200n10p.pdf
VDSS = 100 V IXTK 200N10P PolarHTTM ID25 = 200 A Power MOSFET RDS(on) 7.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C 200 A D (TAB) S ID... See More ⇒
ixtk20n150 ixtx20n150.pdf
High Voltage Power VDSS = 1500V IXTK20N150 MOSFETs w/ Extended ID25 = 20A IXTX20N150 FBSOA RDS(on) ... See More ⇒
ixtk250n10.pdf
IXTK 250N10 VDSS = 100 V High Current ID25 = 250 A MegaMOSTMFET RDS(on) = 5 m N-Channel Enhancement Mode Symbol Test conditions Maximum ratings TO-264 AA (IXTK) VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1.0 M 100 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) G ID25 TC = 25 C MOSFET chip capability 250 A D ID(RMS) Externa... See More ⇒
ixtk210p10t ixtx210p10t.pdf
Advance Technical Information TrenchPTM VDSS = - 100V IXTK210P10T Power MOSFETs ID25 = - 210A IXTX210P10T RDS(on) 7.5m trr 200ns P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C -100 V D S VDGR TJ = 25 C to 150 C, RGS ... See More ⇒
Detailed specifications: IXTK170N10P, IXTK170P10P, IXTK17N120L, IXTK180N15, IXTK180N15P, IXTK200N10L2, IXTK200N10P, IXTK20N140, IRFP250N, IXTK250N10, IXTK32P60P, IXTK34N80, IXTK40P50P, IXTK46N50L, IXTK550N055T2, IXTK5N250, IXTK600N04T2
Keywords - IXTK22N100L MOSFET specs
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