IXTL2x200N085T Datasheet. Specs and Replacement

Type Designator: IXTL2x200N085T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Id| ⓘ - Maximum Drain Current: 112 A

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: ISOPLUSI5PAK

IXTL2x200N085T substitution

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IXTL2x200N085T datasheet

 ..1. Size:66K  ixys
 ixtl2x200n085t.pdf pdf_icon

IXTL2x200N085T

Advance Technical Information TrenchMVTM IXTL2x200N085T VDSS = 85 V ID25 = 2x112 A Power MOSFETs RDS(on) 6.0 m Common-Gate Pair DD (Electrically Isolated Back Surface) N-Channel Enhancement Mode RG RG Avalanche Rated ISOPLUS i5-PakTM (IXTL) S G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C;... See More ⇒

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 ixtl2x240n055t.pdf pdf_icon

IXTL2x200N085T

Advance Technical Information IXTL2x240N055T VDSS =55 V TrenchMVTM ID25 = 2x140 A Power MOSFETs RDS(on) 4.4 m Common-Gate Pair DD (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated RG RG ISOPLUS i5-PakTM (IXTL) S G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RG... See More ⇒

 7.2. Size:66K  ixys
 ixtl2x220n075t.pdf pdf_icon

IXTL2x200N085T

Advance Technical Information TrenchMVTM IXTL2x220N075T VDSS = 75 V ID25 = 2x120 A Power MOSFETs RDS(on) 5.5 m Common-Gate Pair DD (Electrically Isolated Back Surface) N-Channel Enhancement Mode RG RG Avalanche Rated ISOPLUS i5-PakTM (IXTL) S G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; R... See More ⇒

 8.1. Size:66K  ixys
 ixtl2x180n10t.pdf pdf_icon

IXTL2x200N085T

Advance Technical Information TrenchMVTM IXTL2x180N10T VDSS = 100 V ID25 = 2x100 A Power MOSFETs RDS(on) 7.4 m Common-Gate Pair DD (Electrically Isolated Back Surface) N-Channel Enhancement Mode RG RG ISOPLUS i5-PakTM (IXTL) Avalanche Rated S G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 ... See More ⇒

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Detailed specifications: IXTK80N25, IXTK82N25P, IXTK88N30P, IXTK8N150L, IXTK90N15, IXTK90N25L2, IXTK90P20P, IXTL2x180N10T, 5N65, IXTL2x220N075T, IXTL2x240N055T, IXTN110N20L2, IXTN120N25, IXTN170P10P, IXTN17N120L, IXTN200N10L2, IXTN200N10T

Keywords - IXTL2x200N085T MOSFET specs

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