IXTN17N120L Datasheet and Replacement
Type Designator: IXTN17N120L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 540 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 1830 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: SOT227B
IXTN17N120L substitution
IXTN17N120L Datasheet (PDF)
ixtn110n20l2.pdf

Advance Technical Information Linear L2TM Power VDSS = 200V IXTN110N20L2 MOSFET w/Extended ID25 = 100A 24m FBSOA RDS(on) N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C, RGS = 1M 200 VVGSS Co
ixtn102n65x2.pdf

Advance Technical InformationX2-Class VDSS = 650VIXTN102N65X2Power MOSFET ID25 = 76A RDS(on) 30m N-Channel Enhancement ModeAvalanche RatedminiBLOCFast Intrinsic DiodeE153432SGSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VSVGSS Continuous 30 VDVG
ixtn120p20t.pdf

Advance Technical InformationTrenchPTM VDSS = - 200VIXTN120P20TPower MOSFETs ID25 = - 106A RDS(on) 30m trr 300nsP-Channel Enhancement ModeAvalanche RatedminiBLOCFast Intrinsic RectifierE153432SGSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C - 200 VSVDGR TJ = 25C to 150C, RGS = 1M -
Datasheet: IXTK90P20P , IXTL2x180N10T , IXTL2x200N085T , IXTL2x220N075T , IXTL2x240N055T , IXTN110N20L2 , IXTN120N25 , IXTN170P10P , AON6380 , IXTN200N10L2 , IXTN200N10T , IXTN22N100L , IXTN30N100L , IXTN320N10T , IXTN32P60P , IXTN40P50P , IXTN46N50L .
History: HTM150A02 | DACMH40N1200 | BUK9509-40B | VMO550-01F | VMO580-02F | VMM85-02F | APT10050LVR
Keywords - IXTN17N120L MOSFET datasheet
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History: HTM150A02 | DACMH40N1200 | BUK9509-40B | VMO550-01F | VMO580-02F | VMM85-02F | APT10050LVR



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