All MOSFET. IXTN200N10T Datasheet

 

IXTN200N10T Datasheet and Replacement


   Type Designator: IXTN200N10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 550 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 76 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: SOT227B
 

 IXTN200N10T substitution

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IXTN200N10T Datasheet (PDF)

 4.1. Size:170K  ixys
 ixtn200n10l2.pdf pdf_icon

IXTN200N10T

Advance Technical Information Linear L2TM Power VDSS = 100V IXTN200N10L2 MOSFET w/ Extended ID25 = 178A FBSOA RDS(on) 11m N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C, RGS = 1M 100 V

 9.1. Size:137K  ixys
 ixtk21n100 ixtn21n100.pdf pdf_icon

IXTN200N10T

IXTK 21N100 VDSS = 1000 VHigh VoltageIXTN 21N100 ID25 = 21 AMegaMOSTMFETsRDS(on) = 0.55 N-Channel, Enhancement ModeTO-264 AA (IXTK)Symbol Test Conditions Maximum RatingsIXTK IXTNVDSS TJ = 25C to 150C 1000 1000 VGD (TAB)DVDGR TJ = 25C to 150C; RGS = 1 M 1000 1000 VSVGS Continuous 20 20 VminiBLOC, SOT-227 BVGSM Transient 30

 9.2. Size:178K  ixys
 ixtn210p10t.pdf pdf_icon

IXTN200N10T

Advance Technical InformationTrenchPTM VDSS = -100VIXTN210P10TPower MOSFET ID25 = - 210A RDS(on) 7.5m trr 200nsP-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierminiBLOCE153432SGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C -100 VDVDGR TJ = 25C to 150C, RGS = 1M

Datasheet: IXTL2x200N085T , IXTL2x220N075T , IXTL2x240N055T , IXTN110N20L2 , IXTN120N25 , IXTN170P10P , IXTN17N120L , IXTN200N10L2 , STP80NF70 , IXTN22N100L , IXTN30N100L , IXTN320N10T , IXTN32P60P , IXTN40P50P , IXTN46N50L , IXTN550N055T2 , IXTN5N250 .

History: IXTN550N055T2 | IXTL2X180N10T

Keywords - IXTN200N10T MOSFET datasheet

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