IXTP05N100M Datasheet. Specs and Replacement

Type Designator: IXTP05N100M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 710 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 17 Ohm

Package: TO220

IXTP05N100M substitution

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IXTP05N100M datasheet

 9.1. Size:177K  ixys
 ixty08n100d2-ixta08n100d2-ixtp08n100d2.pdf pdf_icon

IXTP05N100M

Preliminary Technical Information Depletion Mode VDSX = 1000V IXTY08N100D2 MOSFET ID(on) > 800mA IXTA08N100D2 RDS(on) 21 IXTP08N100D2 N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSX TJ = 25 C to 150 C 1000 V VGSX Continuous 20 V VGSM Transient 30 V G S PD TC = 25 C60 W D (Tab) TJ -... See More ⇒

 9.2. Size:270K  ixys
 ixty08n100d2 ixta08n100d2 ixtp08n100d2.pdf pdf_icon

IXTP05N100M

Depletion Mode VDSX = 1000V IXTY08N100D2 MOSFET ID(on) > 800mA IXTA08N100D2 RDS(on) 21 IXTP08N100D2 N-Channel D TO-252 (IXTY) G S G D (Tab) S TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings G VDSX TJ = 25 C to 150 C 1000 V S D (Tab) VGSX Continuous 20 V VGSM Transient 30 V TO-220AB (IXTP) PD TC = 25 C60 W TJ ... See More ⇒

 9.3. Size:94K  ixys
 ixtp01n100d ixtu01n100d ixty01n100d.pdf pdf_icon

IXTP05N100M

IXTP 01N100D VDSS = 1000 V High Voltage MOSFET IXTU 01N100D ID25 = 100 mA N-Channel, Depletion Mode IXTY 01N100D RDS(on) = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSX TJ = 25 C to 150 C 1000 V VDGX TJ = 25 C to 150 C 1000 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S IDSS TC = 25 C; TJ = 25 C to... See More ⇒

 9.4. Size:94K  ixys
 ixtp02n50d ixtu02n50d ixty02n50d.pdf pdf_icon

IXTP05N100M

IXTP 02N50D VDSS = 500 V High Voltage MOSFET IXTU 02N50D ID25 = 200 mA N-Channel, Depletion Mode IXTY 02N50D RDS(on) = 30 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSX TJ = 25 C to 150 C 500 V VDGX TJ = 25 C to 150 C 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V G D S IDSS TC = 25 C; TJ = 25 C to 150 C... See More ⇒

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Detailed specifications: IXTN62N50L, IXTN8N150L, IXTN90N25L2, IXTN90P20P, IXTP01N100D, IXTP02N120P, IXTP02N50D, IXTP05N100, IRFZ24N, IXTP05N100P, IXTP06N120P, IXTP08N100D2, IXTP08N100P, IXTP08N120P, IXTP08N50D2, IXTP100N04T2, IXTP102N15T

Keywords - IXTP05N100M MOSFET specs

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