IXTP08N100P Datasheet. Specs and Replacement
Type Designator: IXTP08N100P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
tr ⓘ - Rise Time: 750 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 20 Ohm
Package: TO220
IXTP08N100P substitution
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IXTP08N100P datasheet
ixty08n100d2-ixta08n100d2-ixtp08n100d2.pdf
Preliminary Technical Information Depletion Mode VDSX = 1000V IXTY08N100D2 MOSFET ID(on) > 800mA IXTA08N100D2 RDS(on) 21 IXTP08N100D2 N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSX TJ = 25 C to 150 C 1000 V VGSX Continuous 20 V VGSM Transient 30 V G S PD TC = 25 C60 W D (Tab) TJ -... See More ⇒
ixty08n100d2 ixta08n100d2 ixtp08n100d2.pdf
Depletion Mode VDSX = 1000V IXTY08N100D2 MOSFET ID(on) > 800mA IXTA08N100D2 RDS(on) 21 IXTP08N100D2 N-Channel D TO-252 (IXTY) G S G D (Tab) S TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings G VDSX TJ = 25 C to 150 C 1000 V S D (Tab) VGSX Continuous 20 V VGSM Transient 30 V TO-220AB (IXTP) PD TC = 25 C60 W TJ ... See More ⇒
ixty08n50d2-ixta08n50d2-ixtp08n50d2.pdf
Preliminary Technical Information Depletion Mode VDSX = 500V IXTY08N50D2 MOSFET ID(on) > 800mA IXTA08N50D2 RDS(on) 4.6 IXTP08N50D2 N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSX TJ = 25 C to 150 C 500 V VGSX Continuous 20 V VGSM Transient 30 V G S PD TC = 25 C60 W D (Tab) TJ - 55 ... See More ⇒
Detailed specifications: IXTP01N100D, IXTP02N120P, IXTP02N50D, IXTP05N100, IXTP05N100M, IXTP05N100P, IXTP06N120P, IXTP08N100D2, 75N75, IXTP08N120P, IXTP08N50D2, IXTP100N04T2, IXTP102N15T, IXTP10N60P, IXTP10N60PM, IXTP10P15T, IXTP10P50P
Keywords - IXTP08N100P MOSFET specs
IXTP08N100P cross reference
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