IXTP08N50D2 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTP08N50D2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12.7 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm
Package: TO220
IXTP08N50D2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTP08N50D2 Datasheet (PDF)
ixty08n50d2-ixta08n50d2-ixtp08n50d2.pdf
Preliminary Technical InformationDepletion Mode VDSX = 500VIXTY08N50D2MOSFET ID(on) > 800mAIXTA08N50D2 RDS(on) 4.6 IXTP08N50D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 500 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C60 WD (Tab)TJ - 55
ixty08n100d2-ixta08n100d2-ixtp08n100d2.pdf
Preliminary Technical InformationDepletion Mode VDSX = 1000VIXTY08N100D2MOSFET ID(on) > 800mAIXTA08N100D2 RDS(on) 21 IXTP08N100D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 1000 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C60 WD (Tab)TJ -
ixty08n100d2 ixta08n100d2 ixtp08n100d2.pdf
Depletion Mode VDSX = 1000VIXTY08N100D2MOSFET ID(on) > 800mAIXTA08N100D2 RDS(on) 21 IXTP08N100D2N-ChannelDTO-252 (IXTY)GSGD (Tab)STO-263 AA (IXTA)Symbol Test Conditions Maximum RatingsGVDSX TJ = 25C to 150C 1000 VSD (Tab)VGSX Continuous 20 VVGSM Transient 30 VTO-220AB (IXTP)PD TC = 25C60 WTJ
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: FDC6561AN | 2SK897-MR
History: FDC6561AN | 2SK897-MR
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