IXTP18N60PM Datasheet. Specs and Replacement

Type Designator: IXTP18N60PM  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V

Qg ⓘ - Total Gate Charge: 50 nC

tr ⓘ - Rise Time: 500 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm

Package: TO220

IXTP18N60PM substitution

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IXTP18N60PM datasheet

 8.1. Size:221K  ixys
 ixta182n055t ixtp182n055t.pdf pdf_icon

IXTP18N60PM

Preliminary Technical Information IXTA182N055T VDSS = 55 V TrenchMVTM IXTP182N055T ID25 = 182 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 T... See More ⇒

 8.2. Size:154K  ixys
 ixta180n10t ixtp180n10t.pdf pdf_icon

IXTP18N60PM

IXTA180N10T VDSS = 100V TrenchMVTM IXTP180N10T ID25 = 180A Power MOSFET RDS(on) 6.4m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 175 C 100 V TO-220 (IXTP) VDGR TJ = 25 C to 175 C, RGS = 1M 100 V VGSM Transient 30 V ID25 TC = 25 C 180 A ILRMS Lead Cur... See More ⇒

 8.3. Size:108K  ixys
 ixta180n055t ixtp180n055t ixtq180n055t.pdf pdf_icon

IXTP18N60PM

Advance Technical Information IXTQ 180N055T VDSS = 55 V Trench Gate IXTA 180N055T ID25 = 180 A Power MOSFET IXTP 180N055T RDS(on) = 4.0 m N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C55 V G VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V D (TAB) S VGSM 20 V TO-220 (IXTP) ID25 TC = 25 C 180 A IDRM... See More ⇒

 8.4. Size:214K  ixys
 ixta180n085t ixtp180n085t.pdf pdf_icon

IXTP18N60PM

Preliminary Technical Information IXTA180N085T VDSS = 85 V TrenchMVTM IXTP180N085T ID25 = 180 A Power MOSFET RDS(on) 5.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V S (TAB) ID25 T... See More ⇒

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Detailed specifications: IXTP160N075T, IXTP160N10T, IXTP16N50P, IXTP16N50PM, IXTP170N075T2, IXTP180N085T, IXTP180N10T, IXTP182N055T, IRLZ44N, IXTP18P10T, IXTP1N100P, IXTP1N120P, IXTP1N80, IXTP1N80P, IXTP1R4N100P, IXTP1R4N120P, IXTP1R4N60P

Keywords - IXTP18N60PM MOSFET specs

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