IXTP32N20T Specs and Replacement

Type Designator: IXTP32N20T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm

Package: TO220

IXTP32N20T substitution

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IXTP32N20T datasheet

 7.1. Size:130K  ixys
 ixtp32n65xm.pdf pdf_icon

IXTP32N20T

Preliminary Technical Information X-Class VDSS = 650V IXTP32N65XM Power MOSFET ID25 = 14A RDS(on) 135m N-Channel Enhancement Mode OVERMOLDED Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V G D VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS Continuous 30 V G = Gate D = Drain VGSM Transient 40 V S = S... See More ⇒

 7.2. Size:212K  ixys
 ixth32n65x ixtp32n65x ixtq32n65x.pdf pdf_icon

IXTP32N20T

Preliminary Technical Information X-Class VDSS = 650V IXTP32N65X Power MOSFET ID25 = 32A IXTQ32N65X RDS(on) 135m IXTH32N65X N-Channel Enhancement Mode TO-220AB (IXTP) G D Tab S Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V G VGSS Continuous 30 V... See More ⇒

 9.1. Size:237K  ixys
 ixta3n50p ixtp3n50p ixty3n50p.pdf pdf_icon

IXTP32N20T

IXTA 3N50P VDSS = 500 V PolarHVTM IXTP 3N50P ID25 = 3.6 A Power MOSFET IXTY 3N50P RDS(on) 2.0 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS 30 V VGSM 40 V (TAB) G D S ID25 TC = 25 C 3.6 A IDM ... See More ⇒

 9.2. Size:168K  ixys
 ixta3n50d2-ixtp3n50d2.pdf pdf_icon

IXTP32N20T

Depletion Mode VDSX = 500V IXTA3N50D2 MOSFET ID(on) > 3A IXTP3N50D2 RDS(on) 1.5 N-Channel TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings S VDSX TJ = 25 C to 150 C 500 V D (Tab) VGSX Continuous 20 V VGSM Transient 30 V TO-220AB (IXTP) PD TC = 25 C 125 W TJ - 55 ... +150 C TJM 150 C Tstg - 55 ... +150 C G D D (Tab)... See More ⇒

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Detailed specifications: IXTP28P065T, IXTP2N100, IXTP2N100P, IXTP2N60P, IXTP2N80P, IXTP2R4N120P, IXTP2R4N50P, IXTP300N04T2, 12N60, IXTP32P05T, IXTP32P20T, IXTP36N30P, IXTP36P15P, IXTP3N100D2, IXTP3N100P, IXTP3N110, IXTP3N120

Keywords - IXTP32N20T MOSFET specs

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