IXTP44N10T Specs and Replacement

Type Designator: IXTP44N10T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO220

IXTP44N10T substitution

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IXTP44N10T datasheet

 ..1. Size:187K  ixys
 ixtp44n10t ixty44n10t.pdf pdf_icon

IXTP44N10T

Preliminary Technical Information IXTP44N10T VDSS = 100 V TrenchMVTM IXTY44N10T ID25 = 44 A Power MOSFET RDS(on) 30 m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) D (TAB) G D S TO-252 AA (IXTY) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V G VGSM Tr... See More ⇒

 9.1. Size:238K  ixys
 ixta4n65x2 ixtp4n65x2 ixty4n65x2.pdf pdf_icon

IXTP44N10T

Preliminary Technical Information X2-Class VDSS = 650V IXTY4N65X2 Power MOSFET ID25 = 4A IXTA4N65X2 RDS(on) 850m IXTP4N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G ... See More ⇒

 9.2. Size:154K  ixys
 ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf pdf_icon

IXTP44N10T

PolarP2TM VDSS = 500V IXTA460P2 ID25 = 24A Power MOSFET IXTP460P2 RDS(on) 270m IXTQ460P2 N-Channel Enhancement Mode trr(typ) = 400ns Avalanche Rated IXTH460P2 Fast Intrinsic Diode TO-220AB (IXTP) TO-263 AA (IXTA) TO-3P (IXTQ) G G S D G D S D (Tab) D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V... See More ⇒

 9.3. Size:313K  ixys
 ixty4n65x2 ixta4n65x2 ixtp4n65x2.pdf pdf_icon

IXTP44N10T

X2-Class VDSS = 650V IXTY4N65X2 Power MOSFET ID25 = 4A IXTA4N65X2 RDS(on) 850m IXTP4N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G VGSM Transient 40 V S ID25 TC... See More ⇒

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Detailed specifications: IXTP3N100P, IXTP3N110, IXTP3N120, IXTP3N50D2, IXTP3N50P, IXTP3N60P, IXTP42N15T, IXTP42N25P, 4N60, IXTP44P15T, IXTP450P2, IXTP460P2, IXTP48N20T, IXTP48P05T, IXTP4N60P, IXTP4N80P, IXTP50N085T

Keywords - IXTP44N10T MOSFET specs

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