IXTP50N28T Specs and Replacement

Type Designator: IXTP50N28T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 340 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 280 V

|Id| ⓘ - Maximum Drain Current: 50 A

Electrical Characteristics

tr ⓘ - Rise Time: 180 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm

Package: TO220

IXTP50N28T substitution

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IXTP50N28T datasheet

 6.1. Size:230K  ixys
 ixta50n25t ixtq50n25t ixtp50n25t ixth50n25t.pdf pdf_icon

IXTP50N28T

IXTA50N25T IXTQ50N25T Trench Gate VDSS = 250V IXTP50N25T IXTH50N25T ID25 = 50A Power MOSFET RDS(on) 60m N-Channel Enhancement Mode TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G D S S G D (Tab) D D (Tab) D (Tab) S TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒

 7.1. Size:171K  ixys
 ixtp50n085t ixty50n085t.pdf pdf_icon

IXTP50N28T

Preliminary Technical Information IXTP50N085T VDSS = 85 V TrenchMVTM IXTY50N085T ID25 = 50 A Power MOSFET RDS(on) 23 m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) D (TAB) G D S Symbol Test Conditions Maximum Ratings TO-252 (IXTY) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V... See More ⇒

 9.1. Size:120K  ixys
 ixta5n60p ixtp5n60p.pdf pdf_icon

IXTP50N28T

VDSS = 600 V IXTA 5N60P PolarHVTM ID25 = 5 A IXTP 5N60P Power MOSFET RDS(on) 1.7 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C 600 V VDGR TJ = 25 C to 175 C; RGS = 1 M 600 V VGSS Continuous 30 V G VGSM Transient 40 V S (TAB) ID25 TC = 25 C5 A TO-220 (I... See More ⇒

 9.2. Size:186K  ixys
 ixta52p10p ixtp52p10p ixtq52p10p ixth52p10p.pdf pdf_icon

IXTP50N28T

PolarPTM VDSS = - 100V IXTA52P10P ID25 = - 52A Power MOSFETs IXTP52P10P RDS(on) 50m IXTQ52P10P P-Channel Enhancement Mode Avalanche Rated IXTH52P10P TO-3P (IXTQ) TO-263 AA (IXTA) TO-220AB (IXTP) D G G G S D G S S D (Tab) D D (Tab) S Tab Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 2... See More ⇒

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Detailed specifications: IXTP48N20T, IXTP48P05T, IXTP4N60P, IXTP4N80P, IXTP50N085T, IXTP50N20P, IXTP50N20PM, IXTP50N25T, IRF2807, IXTP52P10P, IXTP55N075T, IXTP56N15T, IXTP5N50P, IXTP5N60P, IXTP60N10T, IXTP60N10TM, IXTP60N20T

Keywords - IXTP50N28T MOSFET specs

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