All MOSFET. IXTP50N28T Datasheet

 

IXTP50N28T MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTP50N28T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 340 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 280 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Qgⓘ - Total Gate Charge: 87 nC
   trⓘ - Rise Time: 180 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm
   Package: TO220

 IXTP50N28T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTP50N28T Datasheet (PDF)

 6.1. Size:230K  ixys
ixta50n25t ixtq50n25t ixtp50n25t ixth50n25t.pdf

IXTP50N28T
IXTP50N28T

IXTA50N25T IXTQ50N25TTrench Gate VDSS = 250VIXTP50N25T IXTH50N25TID25 = 50APower MOSFET RDS(on) 60m N-Channel Enhancement ModeTO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ)G GDSSGD (Tab)DD (Tab) D (Tab)STO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C, RGS = 1M

 7.1. Size:171K  ixys
ixtp50n085t ixty50n085t.pdf

IXTP50N28T
IXTP50N28T

Preliminary Technical InformationIXTP50N085T VDSS = 85 VTrenchMVTMIXTY50N085T ID25 = 50 APower MOSFET RDS(on) 23 m N-Channel Enhancement ModeAvalanche RatedTO-220 (IXTP)D (TAB)GDSSymbol Test Conditions Maximum RatingsTO-252 (IXTY)VDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C; RGS = 1 M 85 VGVGSM Transient 20 V

 9.1. Size:120K  ixys
ixta5n60p ixtp5n60p.pdf

IXTP50N28T
IXTP50N28T

VDSS = 600 VIXTA 5N60PPolarHVTMID25 = 5 AIXTP 5N60PPower MOSFET RDS(on) 1.7 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 175C 600 VVDGR TJ = 25C to 175C; RGS = 1 M 600 VVGSS Continuous 30 VGVGSM Transient 40 VS(TAB)ID25 TC = 25C5 ATO-220 (I

 9.2. Size:186K  ixys
ixta52p10p ixtp52p10p ixtq52p10p ixth52p10p.pdf

IXTP50N28T
IXTP50N28T

PolarPTM VDSS = - 100VIXTA52P10PID25 = - 52APower MOSFETsIXTP52P10P RDS(on) 50m IXTQ52P10PP-Channel Enhancement ModeAvalanche RatedIXTH52P10PTO-3P (IXTQ)TO-263 AA (IXTA) TO-220AB (IXTP)DGGGSDG SSD (Tab)D D (Tab)S TabSymbol Test Conditions Maximum Ratings TO-247 (IXTH)VDSS TJ = 25C to 150C -100 VVDGR TJ = 2

 9.3. Size:169K  ixys
ixtp55n075t ixty55n075t.pdf

IXTP50N28T
IXTP50N28T

Preliminary Technical InformationIXTP55N075T VDSS = 75 VTrenchMVTMIXTY55N075T ID25 = 55 APower MOSFET RDS(on) 19.5 m N-Channel Enhancement ModeAvalanche RatedTO-220 (IXTP)D (TAB)GDSSymbol Test Conditions Maximum RatingsTO-252 (IXTY)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VVGSM Transient 20 V

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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