IXTP60N10TM
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTP60N10TM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Id|ⓘ - Maximum Drain Current: 33
A
Qgⓘ - Total Gate Charge: 49
nC
trⓘ - Rise Time: 59
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019
Ohm
Package:
TO220
IXTP60N10TM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTP60N10TM
Datasheet (PDF)
4.1. Size:288K ixys
ixta60n10t ixtp60n10t.pdf 
TrenchTM VDSS = 100VIXTA60N10TID25 = 60APower MOSFETIXTP60N10T RDS(on) 18m N-Channel Enhancement ModeTO-263Avalanche Rated(IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220VDSS TJ = 25C to 175C 100 V(IXTP)VDGR TJ = 25C to 175C, RGS = 1M 100 VVGSS Continuous 20 VVGSM Transient 30 VG
7.1. Size:135K ixys
ixta60n20t ixtp60n20t ixtq60n20t.pdf
TrenchTM VDSS = 200VIXTA60N20TPower MOSFET ID25 = 60AIXTP60N20T RDS(on) 40m IXTQ60N20TTO-263 AA (IXTA)N-Channel Enhancement ModeFor PDP DriversGAvalanche RatedSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 200 VVDGR TJ = 25C to 175C, RGS = 1M 200 VGVGSS Continuous 20 VDD (
9.1. Size:252K ixys
ixta62n15p ixtp62n15p ixtq62n15p.pdf
IXTA 62N15P VDSS = 150 VPolarHTTMIXTP 62N15P ID25 = 62 APower MOSFETIXTQ 62N15P RDS(on) 40 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 150 VGSVDGR TJ = 25 C to 175 C; RGS = 1 M 150 V(TAB)VGS Continuous 20 VVGSM Transient 30 VTO-220 (I
9.2. Size:206K ixys
ixta6n50d2 ixtp6n50d2 ixth6n50d2.pdf
Preliminary Technical InformationDepletion Mode VDSX = 500VIXTA6N50D2MOSFET ID(on) > 6AIXTP6N50D2 RDS(on) 500m IXTH6N50D2N-ChannelTO-263 AA (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSX TJ = 25C to 150C 500 VVGSX Continuous 20 VVGSM Transient 30 VPD TC = 25C 300 WGDD (Tab)TJ - 55 .
9.3. Size:170K ixys
ixtp64n055t ixty64n055t.pdf
Preliminary Technical InformationIXTP64N055T VDSS = 55 VTrenchMVTMIXTY64N055T ID25 = 64 APower MOSFET RDS(on) 13 m N-Channel Enhancement ModeAvalanche RatedTO-220 (IXTP)D (TAB)GDSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C55 VTO-252 (IXTY)VDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient 20 VG
9.4. Size:167K ixys
ixta64n10l2 ixth64n10l2 ixtp64n10l2.pdf
Advance Technical InformationLinearL2TM Power VDSS = 100VIXTA64N10L2MOSFETs w/Extended ID25 = 64AIXTP64N10L2 RDS(on) 32m FBSOAIXTH64N10L2N-Channel Enhancement ModeTO-263AA (IXTA)Guaranteed FBSOAAvalanche RatedGSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 100 VVDGR TJ = 25C
9.6. Size:229K ixys
ixta6n50p ixtp6n50p.pdf
VDSS = 500 VIXTA 6N50PPolarHVTMID25 = 6 AIXTP 6N50PPower MOSFET RDS(on) 1.1 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS Continuous 30 VGSVGSM Transient 40 V(TAB)ID25 TC = 25 C6 A
9.7. Size:184K ixys
ixta6n100d2-ixtp6n100d2-ixth6n100d2.pdf
Preliminary Technical InformationDepletion Mode VDSX = 1000VIXTA6N100D2MOSFET ID(on) > 6AIXTP6N100D2 RDS(on) 2.2 IXTH6N100D2N-ChannelTO-263 AA (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSX TJ = 25C to 150C 1000 VVGSX Continuous 20 VVGSM Transient 30 VPD TC = 25C 300 WGDD (Tab)TJ -
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